Arsenic source flow rate dependence of minority carrier lifetime in GaAsN grown by chemical beam epitaxy

2013 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Maki Aisaka ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Flow Rate ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Rate Dependence ◽  
Chemical Beam Epitaxy ◽  
Source Flow ◽  
Arsenic Source

Effect of arsenic source flow rate on the lattice defects in GaAsN grown by chemical beam epitaxy

2013 ◽  
Vol 10 (11) ◽  
pp. 1477-1480 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Flow Rate ◽  
Lattice Defects ◽  
Chemical Beam Epitaxy ◽  
Source Flow ◽  
Arsenic Source

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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