Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures
2005 ◽
Vol 48
(4)
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pp. 498-502
Keyword(s):
1968 ◽
Vol 24
(4)
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pp. 301-316
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Keyword(s):
2018 ◽
Vol 39
(4)
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pp. 552-555
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1988 ◽