Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures

1984 ◽  
Vol 45 (1) ◽  
pp. 52-53 ◽  
Author(s):  
U. Efron ◽  
P. O. Braatz
2018 ◽  
Vol 39 (4) ◽  
pp. 552-555 ◽  
Author(s):  
Maitreya Dutta ◽  
Saptarshi Mandal ◽  
Raghuraj Hathwar ◽  
Alec M. Fischer ◽  
Franz A. M. Koeck ◽  
...  

2014 ◽  
Vol 55 ◽  
pp. 121-127 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Alexandru Focsa ◽  
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