Solution-processed electrodes for efficient hybrid copper indium gallium diselenide thin film solar cells

2013 ◽  
Author(s):  
Manuel Reinhard ◽  
Ralph Eckstein ◽  
Paul Sonntag ◽  
Linda Burkert ◽  
Bernhard Dimmler ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Solution Processed ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells

2002 ◽  
Vol 91 (1) ◽  
pp. 516 ◽  
Author(s):  
J. Tringe ◽  
J. Nocerino ◽  
R. Tallon ◽  
W. Kemp ◽  
W. Shafarman ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Ionizing Radiation ◽  
Radiation Effects ◽  
Thin Film Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Comparative Study of the Second Generation a-Si:H, CdTe, and CIGS Thin-Film Solar Cells

2019 ◽  
Vol 1154 ◽  
pp. 102-111 ◽  
Author(s):  
Md. Mahabub Alam Moon ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Second Generation ◽  
Operating Temperature ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film ◽  
Copper Indium ◽  
Indium Gallium ◽  
Hydrogenated Amorphous ◽  
Copper Indium Gallium

In this article, simulation results of novel and facilitated heterostructures of the Second Generation (2G) Thin-film Solar Cells (TFSCs): hydrogenated amorphous Silicon (a-Si:H), Cadmium Telluride (CdTe), and Copper Indium Gallium di-Selenide (Cu(In,Ga)Se2or CIGS) have been presented to compare their performances. The solar cells have been modeled and analyzed for investigating optimized structure with higher stabilized efficiency. Entire simulations have been accomplished using Analysis of Microelectronic and Photonic Structures – 1 Dimensional (AMPS-1D) device simulator. The thickness of the absorber layer was varied from 50 nm to 1400 nm for a-Si:H and from 50 nm to 3 μm for both CdTe and CIGS cells to realize its impact on cell performance. The utmost efficiency, η of 9.134%, 20.776%, and 23.03% were achieved at AM 1.5 (1000 W/m2) for a-Si:H, CdTe, and CIGS material cells, respectively. Lastly, the operating temperature of the three cells was varied from 280°K to 328°K to realize its effect on the cell PV performances.

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