PERFORMANCE OF DIFFERENT PHOTOVOLTAIC TECHNOLOGIES FOR AMORPHOUS SILICON (A-SI) AND COPPER INDIUM GALLIUM DI-SELENIDE (CIGS) PHOTOVOLTAIC MODULES

In this work, the analysis of performance of two types of photovoltaic (PV) (Amorphous Silicon (a-Si) Copper Indium Gallium Diselenide (CIGS) technologies were achieved out under under Iraqi (Baghdad)climate conditions. The elevation of the selected site is 9 m above ground level. The experimental work covered the eight commercially available PV technologies. The two technologies that employed in this work are, Amorphous Silicon (a-Si) and Copper Indium Gallium Diselenide (CIGS). The total period of the experimental work was 7 months, and the data were analyzed simultaneously. Special attention is given to the influence of temperature and solar radiation the performance of the PV modules. Where, it was proposed a simple I-V curve test for PV modules. The results showed that the proposed system successfully experimentally extracted I-V curves of the selected two PV modules (amorphous and CIGS solar modules). The maximum values of power (Pmax) at solar radiation intensity 750 W/m² are 2.742 W, and 2.831 W for amorphous silicon and copper indium gallium di-selenide respectively. This is occurred because the lowest solar module operating temperature (19 oC and 17 oC for solar radiation 750 and 1000 W/m2 respectively) and ambient temperature (7 oC) and for Jan., 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. Furthermore, the minimum values of power (Pmax) at solarradiation intensity 750 W/m² are 2.530, and 2.831 for amorphous silicon and copper indium gallium di-selenide respectively because we have the highest solar module operating temperature (57 oC, and 55 oC respectively) and ambient temperature (45 oC) for April, 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. The highest efficiency can be notes for CIGS solar module with a value 7.3%, while the lowest one is 5.5% for amorphous solar module.

Corrigendum to "Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software [J. Nig. Soc. Phys. Sci. 3 (2021) 48–58, https://doi.org/10.46481/jnsps.2021.133]"

The original content of this published Article has an error in the name of one of the co-authors Eli Danladi which was written incorrectly as D. Eli. We highly regret this.