Study of Defect Properties in CuGaSe2 Thin-Film Solar-Cells Using Admittance Spectroscopy

Author(s):  
Muhammad Monirul Islam ◽  
Shogo Ishizuka ◽  
Hajime Shibata ◽  
Shigeru Niki ◽  
Katsuhiro Akimoto ◽  
...  
2010 ◽  
Vol 108 (6) ◽  
pp. 064501 ◽  
Author(s):  
Jian V. Li ◽  
Steve W. Johnston ◽  
Xiaonan Li ◽  
David S. Albin ◽  
Timothy A. Gessert ◽  
...  

2005 ◽  
Vol 176 (25-28) ◽  
pp. 2171-2175 ◽  
Author(s):  
M BURGELMAN ◽  
P NOLLET

2012 ◽  
Vol 100 (23) ◽  
pp. 233504 ◽  
Author(s):  
P. A. Fernandes ◽  
A. F. Sartori ◽  
P. M. P. Salomé ◽  
J. Malaquias ◽  
A. F. da Cunha ◽  
...  

2017 ◽  
Vol 19 (45) ◽  
pp. 30410-30417 ◽  
Author(s):  
Thomas Paul Weiss ◽  
Shiro Nishiwaki ◽  
Benjamin Bissig ◽  
Stephan Buecheler ◽  
Ayodhya N. Tiwari

Deep acceptor states at the Cu(In,Ga)Se2/CdS interface were detected by voltage dependent admittance spectroscopy for state of the art low temperature processed chalcopyrite solar cells.


2000 ◽  
Vol 88 (9) ◽  
pp. 5474-5481 ◽  
Author(s):  
Joachim Kneisel ◽  
Kai Siemer ◽  
Ilka Luck ◽  
Dieter Bräunig

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