Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Pressure Sensor ◽  
Electrical Circuit ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S =44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Pressure Overload ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
Pressure Sensitivity ◽  
Bipolar Junction Transistor ◽  
Chip Size ◽  
Junction Transistor

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

scholarly journals High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Pressure Sensor ◽  
Feedback Loop ◽  
Electric Circuit ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Negative Feedback Loop ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm<sup>2</sup> chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2K<sub>NLback</sub> = 0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2K<sub>NLtop</sub> = 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

scholarly journals High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Pressure Overload ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
Pressure Sensitivity ◽  
Bipolar Junction Transistor ◽  
Chip Size ◽  
Junction Transistor

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

scholarly journals High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Pressure Overload ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
Pressure Sensitivity ◽  
Bipolar Junction Transistor ◽  
Chip Size ◽  
Junction Transistor

Abstract The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

scholarly journals High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Negative Feedback ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Pressure Overload ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
Pressure Sensitivity ◽  
Bipolar Junction Transistor ◽  
Chip Size ◽  
Junction Transistor

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

scholarly journals High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Pressure Sensor ◽  
Feedback Loop ◽  
Electric Circuit ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Negative Feedback Loop ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm<sup>2</sup> chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2K<sub>NLback</sub> = 0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2K<sub>NLtop</sub> = 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

scholarly journals High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Pressure Sensor ◽  
Feedback Loop ◽  
Electric Circuit ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Negative Feedback Loop ◽  
Back Side ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0 × 4.0 mm2 chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback = 0.11 ± 0.09%/FS (pressure is applied from the back side of pressure sensor chip) and 2KNLtop = 0.18 ± 0.09%/FS (pressure is applied from the top side of pressure sensor chip). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

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