Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

<p>High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.</p>

Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p–type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

<p>High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.</p>

Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

High Aspect Ratio, Vertical Bipolar Junction Transistor NPN Device Fault Isolation & Analysis Techniques

Analog components are still an important aspect of our society's electronic portfolio. They play a role in the emerging and expanding 5G electronic industry, for instance. The NPN bipolar junction transistor (BJT) is the foundation of many analog circuits and has continually evolved to meet more demanding specifications [1], [2]. Certain embodiments of these NPNs pose difficulties in failure analysis. One such embodiment is a vertical NPN BJT with high aspect ratio dimensions. Specifically, the dimensions involved are nanometer thick NP & PN junctions that extend microns in length. These dimensions provide desired performance improvements but a subtle, nanometer scale defect present anywhere along this length can cause substantial electrical shifts detrimental to an analog circuit. Several simple and complex techniques using common failure analysis tools can isolate these defects as discussed in this paper.