A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

2020 ◽  
Author(s):  
Saeed Zeinolabedinzadeh ◽  
Ickhung Song ◽  
Mehmet Kaynak ◽  
John D. Cressler
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
High Output Power ◽  
Locking Range ◽  
Wide Locking Range ◽  
Low Phase Noise ◽  
High Output

scholarly journals Design of Oscillator Based on A Deformed Structure Parallel Coupled Line Filter

2018 ◽  
Vol 232 ◽  
pp. 02042
Author(s):  
Enhao Wang ◽  
Jin Pan ◽  
Deqiang Yang ◽  
Wenzhe Liu ◽  
Tao Tang
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Filter Design ◽  
Radar System ◽  
High Output Power ◽  
It Use ◽  
Feedback Form ◽  
Coupled Line ◽  
Low Phase Noise ◽  
High Output

This paper proposes an oscillator based on a deformed structure parallel coupled line filter design. The requirements of this design are the output power meet 10dBm, and phase noise is below -90dBc/Hz at 10kHz off the centre point. This work adopts parallel positive feedback form, and it use Parallel Coupled Line Filter, making this design simple in structure and low in cost. This design has low phase noise and high output power features, working at 2.4GHz, intended to use in a through-the-wall radar system.

A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

2016 ◽  
Vol 25 (06) ◽  
pp. 1650053 ◽  
Author(s):  
Jincan Zhang ◽  
Yuming Zhang ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Heterojunction Bipolar Transistor ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Fully Integrated ◽  
Low Phase Noise ◽  
High Output ◽  
Ku Band

In this paper, a fully integrated Ku-band voltage controlled oscillator (VCO) with low phase noise is presented in a GaAs heterojunction bipolar transistor (HBT) technology. A cross-coupled configuration is employed to achieve low phase noise, and to achieve high output power, the largest HBT and higher bias current are adopted. The implemented VCO demonstrates that the oscillation frequency is from 13.77[Formula: see text]GHz to 14.8[Formula: see text]GHz, with a maximum 4.83[Formula: see text]dBm output power at 13.77[Formula: see text]GHz. The phase noise of the VCO is [Formula: see text]100.2[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset from 14.36[Formula: see text]GHz oscillation frequency. The VCO consumes 61.2[Formula: see text]mW from 6[Formula: see text]V supply and occupies an area of 0.51[Formula: see text]mm[Formula: see text][Formula: see text]mm. Finally, the figure-of-merits (FOMs) for VCOs are discussed.

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors

2017 ◽  
Vol 45 (11) ◽  
pp. 1621-1636
Author(s):  
Hsuan-Ling Kao ◽  
Chih-Sheng Yeh ◽  
Hsien-Chin Chiu ◽  
Cheng-Lin Cho ◽  
Chun-Hu Cheng
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
High Output Power ◽  
Gan Hemt ◽  
Low Phase Noise ◽  
High Output

Improved structure of a DRO for high output power and low phase noise

2004 ◽  
Vol 41 (1) ◽  
pp. 68-70 ◽  
Author(s):  
Sung-Jae Ha ◽  
Chang-Don Ahn ◽  
Keun-Taek Lee ◽  
Ui-Seok Hong
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
High Output Power ◽  
Low Phase Noise ◽  
High Output

scholarly journals Low phase‐noise high output power 176‐GHz voltage‐controlled oscillator in a 130‐nm BiCMOS technology

2019 ◽  
Vol 13 (14) ◽  
pp. 2490-2494 ◽  
Author(s):  
Habeeb Bello ◽  
Leonardo Pantoli ◽  
Herman Jalli Ng ◽  
Dietmar Kissinger ◽  
Giorgio Leuzzi
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Bicmos Technology ◽  
Low Phase Noise ◽  
High Output
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