2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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(FIVE YEARS 28)

H-INDEX

(FIVE YEARS 1)

Published By IEEE

9781728121291

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2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040171 ◽

2020 ◽

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Silicon Based Millimeter Wave ASICs: From Circuits to System Applications

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040194 ◽

2020 ◽

Author(s):

Kefei Wu ◽

Mona Mostafa Hella

Keyword(s):

Millimeter Wave ◽

Silicon Based

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Author Index

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040169 ◽

2020 ◽

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A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040174 ◽

2020 ◽

Author(s):

Sascha Breun ◽

Matthias Voelkel ◽

Albert-Marcel Schrotz ◽

Marco Dietz ◽

Vadim Issakov ◽

...

Keyword(s):

Low Power ◽

Bicmos Technology ◽

Sige Bicmos

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A 0.95 dB Insertion Loss Compact Ultra Wideband Millimeter-Wave Bandpass Filter Using 0.18 $\mu \mathrm{m}$ RF CMOS Technology

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040179 ◽

2020 ◽

Author(s):

Venkata Narayana Rao Vanukuru

Keyword(s):

Millimeter Wave ◽

Insertion Loss ◽

Bandpass Filter ◽

Cmos Technology ◽

Ultra Wideband ◽

Rf Cmos

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28 Gbps Bang-Bang CDR for 100G PSM4 with Independently Tunable Proportional and Integral Parameters of the Loop Filter in $0.25\ \mu \mathrm{m}$ Photonic BiCMOS Technology

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040190 ◽

2020 ◽

Author(s):

Mohammed Iftekhar ◽

Sergiy Gudyriev ◽

J. Christoph Scheytt

Keyword(s):

Loop Filter ◽

Bicmos Technology

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A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040189 ◽

2020 ◽

Author(s):

Saeed Zeinolabedinzadeh ◽

Ickhung Song ◽

Mehmet Kaynak ◽

John D. Cressler

Keyword(s):

Phase Noise ◽

Output Power ◽

High Output Power ◽

Locking Range ◽

Wide Locking Range ◽

Low Phase Noise ◽

High Output

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Extended Equivalent Circuit Model for Enhanced Substrate Modeling of Three-Port Inductors

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040195 ◽

2020 ◽

Author(s):

Sascha Breun ◽

Sebastian Kehl-Waas ◽

Vadim Issakov

Keyword(s):

Equivalent Circuit ◽

Equivalent Circuit Model ◽

Circuit Model

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Committee

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040183 ◽

2020 ◽

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Full-wave RF Modeling of a Fan-Out Wafer-Level Packaging Technology Based on Al-Al Wafer Bonding

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf46766.2020.9040180 ◽

2020 ◽

Author(s):

M. Stocchi ◽

M. Wietstruck ◽

S. Schulze ◽

C. Zhibo ◽

S. Tolunay ◽

...

Keyword(s):

Wafer Bonding ◽

Wafer Level ◽

Packaging Technology ◽

Wafer Level Packaging ◽

Full Wave

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2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Table of contents

Silicon Based Millimeter Wave ASICs: From Circuits to System Applications

Author Index

A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

A 0.95 dB Insertion Loss Compact Ultra Wideband Millimeter-Wave Bandpass Filter Using 0.18 $\mu \mathrm{m}$ RF CMOS Technology

28 Gbps Bang-Bang CDR for 100G PSM4 with Independently Tunable Proportional and Integral Parameters of the Loop Filter in $0.25\ \mu \mathrm{m}$ Photonic BiCMOS Technology

A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

Extended Equivalent Circuit Model for Enhanced Substrate Modeling of Three-Port Inductors

Committee

Full-wave RF Modeling of a Fan-Out Wafer-Level Packaging Technology Based on Al-Al Wafer Bonding

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2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Table of contents

Silicon Based Millimeter Wave ASICs: From Circuits to System Applications

Author Index

A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

A 0.95 dB Insertion Loss Compact Ultra Wideband Millimeter-Wave Bandpass Filter Using 0.18 $\mu \mathrm{m}$ RF CMOS Technology

28 Gbps Bang-Bang CDR for 100G PSM4 with Independently Tunable Proportional and Integral Parameters of the Loop Filter in $0.25\ \mu \mathrm{m}$ Photonic BiCMOS Technology

A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

Extended Equivalent Circuit Model for Enhanced Substrate Modeling of Three-Port Inductors

Committee

Full-wave RF Modeling of a Fan-Out Wafer-Level Packaging Technology Based on Al-Al Wafer Bonding

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Latest Publications