A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices

A real-time thermal model for monitoring of power semiconductor devices

2013 IEEE Energy Conversion Congress and Exposition ◽

10.1109/ecce.2013.6646980 ◽

2013 ◽

Cited By ~ 8

Author(s):

Tanya Kirilova Gachovska ◽

Bo Tian ◽

Jerry Hudgins ◽

Wei Qiao ◽

John Donlon

Keyword(s):

Real Time ◽

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Distributed and coupled 2D electro-thermal model of power semiconductor devices

The European Physical Journal Applied Physics ◽

10.1051/epjap/2014130486 ◽

2014 ◽

Vol 66 (2) ◽

pp. 20102 ◽

Cited By ~ 1

Author(s):

Ghania Belkacem ◽

Stéphane Lefebvre ◽

Pierre-Yves Joubert ◽

Mounira Bouarroudj-Berkani ◽

Denis Labrousse ◽

...

Keyword(s):

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196) ◽

Choosing a thermal model for electrothermal simulation of power semiconductor devices

10.1109/pesc.1998.703403 ◽

2002 ◽

Author(s):

A. Ammous ◽

S. Ghedira ◽

B. Allard ◽

H. Morel

Keyword(s):

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Electrothermal Simulation

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) ◽

Thermal model of power semiconductor devices for electro-thermal circuit simulations

10.1109/miel.2002.1003167 ◽

2003 ◽

Cited By ~ 6

Author(s):

P.M. Igic ◽

P.A. Mawby ◽

M.S. Towers ◽

S. Batcup

Keyword(s):

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Thermal Circuit ◽

Circuit Simulations

2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

Development of a predictive observer thermal model for power semiconductor devices for overload monitoring in high power high frequency converters

10.1109/apec.2012.6166144 ◽

2012 ◽

Cited By ~ 3

Author(s):

Sumit Dutta ◽

Babak Parkhideh ◽

Subhashish Bhattacharya ◽

Giti Karimi Moghaddam ◽

Richard Gould

Keyword(s):

High Power ◽

High Frequency ◽

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Frequency Converters ◽

Nonlinear Compact Thermal Model of Power Semiconductor Devices

IEEE Transactions on Components and Packaging Technologies ◽

10.1109/tcapt.2010.2052052 ◽

2010 ◽

Vol 33 (3) ◽

pp. 643-647 ◽

Cited By ~ 35

Author(s):

Krzysztof Gorecki ◽

Janusz Zarebski

Keyword(s):

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Choosing a thermal model for electrothermal simulation of power semiconductor devices

IEEE Transactions on Power Electronics ◽

10.1109/63.750183 ◽

1999 ◽

Vol 14 (2) ◽

pp. 300-307 ◽

Cited By ~ 88

Author(s):

A. Ammous ◽

S. Ghedira ◽

B. Allard ◽

H. Morel ◽

D. Renault

Keyword(s):

Thermal Model ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Electrothermal Simulation

Preface to the Special Issue on ^|^ldquo;Current Technologies and Applications on Power Semiconductor Devices ^|^mdash;Silicon and Wide Bandgap Semiconductors^|^mdash;^|^rdquo;

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.130.911 ◽

2010 ◽

Vol 130 (6) ◽

pp. 911-911

Author(s):

Mutsuhiro Mori

Keyword(s):

Semiconductor Devices ◽

Wide Bandgap ◽

Special Issue ◽

Wide Bandgap Semiconductors ◽

Power Semiconductor ◽

Bandgap Semiconductors

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.134.432 ◽

2014 ◽

Vol 134 (6) ◽

pp. 432-433

Author(s):

Masahiro Sato ◽

Akiko Kumada ◽

Kunihiko Hidaka ◽

Keisuke Yamashiro ◽

Yuji Hayase ◽

...

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Introduction: Applications Roadmap of GaN Power Semiconductor Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.139.76 ◽

2019 ◽

Vol 139 (2) ◽

pp. 76-79

Author(s):

Masayoshi YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽