A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2009.2033299 ◽

2009 ◽

Vol 57 (12) ◽

pp. 3322-3332 ◽

Author(s):

K.S. Yuk ◽

G.R. Branner ◽

D.J. McQuate

Keyword(s):

Charge Trapping ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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An improved empirical large-signal model for high-power GaN HEMTs including self-heating and charge-trapping effects

2009 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2009.5165806 ◽

2009 ◽

Author(s):

Kelvin Yuk ◽

G. R. Branner ◽

David McQuate

Keyword(s):

Charge Trapping ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3132892 ◽

2021 ◽

pp. 1-1

Author(s):

Wenrui Hu ◽

Yong-Xin Guo

Keyword(s):

Multilayer Perceptron ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.907143 ◽

2007 ◽

Vol 54 (11) ◽

pp. 2830-2836 ◽

Author(s):

Anwar Jarndal ◽

GÜnter Kompa

Keyword(s):

Intermodulation Distortion ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

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ANN-Based Large-Signal Model of AlGaN/GaN HEMTs With Accurate Buffer-Related Trapping Effects Characterization

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2020.2990171 ◽

2020 ◽

Vol 68 (7) ◽

pp. 3090-3099

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Anwar Jarndal ◽

Taijun Liu ◽

Biao Hu ◽

...

Keyword(s):

Large Signal ◽

Signal Model ◽

Gan Hemts ◽

Trapping Effects

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A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

Microelectronics Reliability ◽

10.1016/j.microrel.2010.09.025 ◽

2011 ◽

Vol 51 (2) ◽

pp. 229-234 ◽

Author(s):

D. Mari ◽

M. Bernardoni ◽

G. Sozzi ◽

R. Menozzi ◽

G.A. Umana-Membreno ◽

...

Keyword(s):

Large Signal ◽

Signal Model ◽

Self Heating ◽

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A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2137 ◽

2015 ◽

Vol 30 (1) ◽

pp. e2137 ◽

Author(s):

Zhang Wen ◽

Yuehang Xu ◽

Changsi Wang ◽

Xiaodong Zhao ◽

Zhikai Chen ◽

...

Keyword(s):

Extraction Method ◽

Parameter Extraction ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemt ◽

Trapping Effects

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Fast model generation for AlGaN/GaN HEMTs with the consideration of self-heating and charge trapping effects

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ◽

10.1109/imws-amp.2016.7588311 ◽

2016 ◽

Author(s):

Andong Huang ◽

Zheng Zhong ◽

Yongxin Guo ◽

Wen Wu

Keyword(s):

Charge Trapping ◽

Model Generation ◽

Self Heating ◽

Gan Hemts ◽

Trapping Effects

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Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) ◽

10.1109/imws-amp.2015.7324992 ◽

2015 ◽

Author(s):

Mehdi Khan ◽

Weiqiang Qian ◽

Dong Huang ◽

Lei Li ◽

Fujiang Lin

Keyword(s):

Power Amplifier ◽

Large Signal ◽

Signal Model ◽

Self Heating ◽

Gan Hemt ◽

Amplifier Design ◽

Trapping Effects

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A Large-Signal Model of GaN HEMTs for Linear High Power Amplifier Design

2006 European Microwave Integrated Circuits Conference ◽

10.1109/emicc.2006.282810 ◽

2006 ◽

Author(s):

Endalkachew Mengistu ◽

Gunter Kompa

Keyword(s):

Power Amplifier ◽

Large Signal ◽

Signal Model ◽

High Power Amplifier ◽

Gan Hemts ◽

Amplifier Design

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A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2018.2857830 ◽

2018 ◽

pp. 1-14 ◽

Author(s):

Gian Piero Gibiino ◽

Alberto Santarelli ◽

Fabio Filicori

Keyword(s):

Charge Trapping ◽

Large Signal ◽

Signal Model ◽

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