ANN-Based Large-Signal Model of AlGaN/GaN HEMTs With Accurate Buffer-Related Trapping Effects Characterization

2020 ◽  
Vol 68 (7) ◽  
pp. 3090-3099
Author(s):  
Xuekun Du ◽  
Mohamed Helaoui ◽  
Anwar Jarndal ◽  
Taijun Liu ◽  
Biao Hu ◽  
...  
Keyword(s):  
Large Signal ◽  
Signal Model ◽  
Gan Hemts ◽  
Trapping Effects

A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design

2010 ◽  
Vol 7 (10) ◽  
pp. 2450-2454 ◽  
Author(s):  
Valiallah Zomorrodian ◽  
Yi Pei ◽  
Umesh K. Mishra ◽  
Robert A. York
Keyword(s):  
Circuit Design ◽  
Large Signal ◽  
Signal Model ◽  
Non Linear Circuit ◽  
Linear Circuit ◽  
Non Linear ◽  
Gan Hemts

Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

2017 ◽  
Vol 26 (5) ◽  
pp. 952-959
Author(s):  
Changsi Wang ◽  
Yuehang Xu ◽  
Zhang Wen ◽  
Zhikai Chen ◽  
Ruimin Xu
Keyword(s):  
Thermal Resistance ◽  
Large Signal ◽  
Signal Model ◽  
Gan Hemts

Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design

2010 ◽  
Vol 54 (7) ◽  
pp. 696-700 ◽  
Author(s):  
Anwar Jarndal ◽  
Pouya Aflaki ◽  
Louay Degachi ◽  
Ahmed Birafane ◽  
Ammar Kouki ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Large Signal ◽  
Signal Model ◽  
Gan Hemts ◽  
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