Improvement of the threshold current of AlGaAs/GaAs single quantum well lasers by substrate tilting

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586130 ◽

1992 ◽

Vol 10 (2) ◽

pp. 838 ◽

Author(s):

I. W. Tao

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Narrow stripe graded barrier single quantum well lasers-threshold current considerations

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1987.1073457 ◽

1987 ◽

Vol 23 (6) ◽

pp. 988-992 ◽

Author(s):

N. Patel ◽

T. Mattos ◽

F. Prince ◽

A. Nunes

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers

Journal of Applied Physics ◽

10.1063/1.350757 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4583-4588 ◽

Author(s):

M. E. Givens ◽

L. M. Miller ◽

J. J. Coleman

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Well width dependence of gain and threshold current in GaAlAs single quantum well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1986.1073021 ◽

1986 ◽

Vol 22 (5) ◽

pp. 625-630 ◽

Author(s):

B. Saint-Cricq ◽

F. Lozes-Dupuy ◽

G. Vassilieff

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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The effects of strain on the threshold current density in InGaAsP/InP strained‐layer single‐quantum‐well lasers

Journal of Applied Physics ◽

10.1063/1.357468 ◽

1994 ◽

Vol 76 (6) ◽

pp. 3250-3254 ◽

Author(s):

Shunji Seki ◽

Kiyoyuki Yokoyama

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum‐well lasers through introduction of superlattice waveguide layers

Journal of Applied Physics ◽

10.1063/1.340110 ◽

1988 ◽

Vol 63 (9) ◽

pp. 4755-4758 ◽

Author(s):

H. Yokoyama ◽

H. Iwata ◽

M. Sugimoto ◽

K. Onabe ◽

R. Lang

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Lasing Threshold ◽

Single Quantum ◽

Single Quantum Well

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Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.133.1139 ◽

2013 ◽

Vol 133 (6) ◽

pp. 1139-1144

Author(s):

Durga Prasad Sapkota ◽

Madhu Sudan Kayastha ◽

Koichi Wakita

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Effects Of Temperature

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Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers

Electronics Letters ◽

10.1049/el:19920524 ◽

1992 ◽

Vol 28 (9) ◽

pp. 829 ◽

Author(s):

P.J.A. Thijs ◽

J.J.M. Binsma ◽

L.F. Tiemeijer ◽

T. van Dongen

Keyword(s):

Quantum Well ◽

Output Power ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

High Output Power ◽

Single Quantum Well ◽

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Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.35226 ◽

1989 ◽

Vol 25 (9) ◽

pp. 2007-2012 ◽

Author(s):

L.D. Zhu ◽

B.Z. Zheng ◽

G.A.B. Feak

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Quantum Efficiency ◽

Optical Gain ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

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Comparison of threshold current and microwave modulation of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs single quantum well lasers

10.1364/ofc.1990.fe5 ◽

1990 ◽

Author(s):

S. D. OFFSEY ◽

W. J. SCHAFF ◽

P. J. TASKER ◽

L. F. EASTMAN

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Microwave Modulation

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