Resolution of electron-beam-pumped-semiconductor-laser- (EBPSL) based large-screen projection system

2001 ◽  
Author(s):  
Oleg V. Bogdankevich ◽  
Alexander Sadchikhin ◽  
S. Sozinov
Keyword(s):  
Electron Beam ◽  
Semiconductor Laser ◽  
Projection System ◽  
Large Screen ◽  
Large Screen Projection

Information characteristics of acousto-optic deflection unit of a laser large-screen projection system

1999 ◽  
Author(s):  
Boris S. Gurevich ◽  
Sergei V. Andreyev ◽  
Salmor A. Alymkulov ◽  
Andrey V. Belyaev ◽  
Alexander I. Kantsyrev ◽  
...  
Keyword(s):  
Projection System ◽  
Large Screen ◽  
Information Characteristics ◽  
Large Screen Projection

scholarly journals Television Large Screen Projection System

Shinku ◽  
1961 ◽  
Vol 4 (12) ◽  
pp. 497-499
Author(s):  
Koji CHIBA
Keyword(s):  
Projection System ◽  
Large Screen ◽  
Large Screen Projection

Large-screen projection system with a laser and an electro-optical amplifier

1995 ◽  
Vol 16 (2) ◽  
pp. 162-163
Author(s):  
Yu. D. Dumarevsky ◽  
M. A. Kazaryan ◽  
L. V. Medvedeva ◽  
V. V. Chvykov
Keyword(s):  
Optical Amplifier ◽  
Projection System ◽  
Large Screen ◽  
Large Screen Projection

Study of a-Si:H/μc-Si:H Heterojunction as Photosensor for Large Screen Projection Display

1992 ◽  
Vol 258 ◽  
Author(s):  
Weiqiang Han ◽  
Gaorong Han ◽  
Jianmin Qiao ◽  
Pija Du ◽  
Danmei Zhao ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Glow Discharge ◽  
Device Performance ◽  
Blocking Layer ◽  
Large Screen ◽  
Cvd Method ◽  
Projection Display ◽  
Large Screen Projection ◽  
Deposition Conditions ◽  
Structure Properties

ABSTRACTLiquid crystal light valve(LCLV) using an a-Si:H/μc-Si:H heterostructure as the photosensor and the nematic liquid crystal as the modulator has been firstly presented for large screen projection display. The a-Si:H photoconductor and μc-Si:H light blocking layer were prepared by a modified glow discharge CVD method. The optoelectric and structure properties of the μc-Si:H films deposited at different deposition conditions have been studied. The a-Si:H film and the continuously deposited pc-Si:H film possibly form an a-Si:H/μc-Si:H heterojunction. The electrical and optoelectric properties of the heterojunction has been studied.LCLV using a-Si:H/μc-Si:H heterostructure has shown that the most aspects of the device performance can be improved.

Sealed scanned electron-beam-excited semiconductor laser

1974 ◽  
Vol 4 (2) ◽  
pp. 242-243
Author(s):  
G S Kotovshchikov ◽  
V P Kuklev ◽  
N P Lantsov ◽  
G A Meerovich ◽  
A G Negodov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Semiconductor Laser
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