Study of a-Si:H/μc-Si:H Heterojunction as Photosensor for Large Screen Projection Display

1992 ◽  
Vol 258 ◽  
Author(s):  
Weiqiang Han ◽  
Gaorong Han ◽  
Jianmin Qiao ◽  
Pija Du ◽  
Danmei Zhao ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Glow Discharge ◽  
Device Performance ◽  
Blocking Layer ◽  
Large Screen ◽  
Cvd Method ◽  
Projection Display ◽  
Large Screen Projection ◽  
Deposition Conditions ◽  
Structure Properties

ABSTRACTLiquid crystal light valve(LCLV) using an a-Si:H/μc-Si:H heterostructure as the photosensor and the nematic liquid crystal as the modulator has been firstly presented for large screen projection display. The a-Si:H photoconductor and μc-Si:H light blocking layer were prepared by a modified glow discharge CVD method. The optoelectric and structure properties of the μc-Si:H films deposited at different deposition conditions have been studied. The a-Si:H film and the continuously deposited pc-Si:H film possibly form an a-Si:H/μc-Si:H heterojunction. The electrical and optoelectric properties of the heterojunction has been studied.LCLV using a-Si:H/μc-Si:H heterostructure has shown that the most aspects of the device performance can be improved.

scholarly journals Large Screen Extra Slim Liquid Crystal Rear Projection Display.

1998 ◽  
Vol 52 (5) ◽  
pp. 750-756
Author(s):  
Kyouhei Fukuda ◽  
Shigeru Mori ◽  
Gouzou Satou ◽  
Nobuaki Kabuto
Keyword(s):  
Liquid Crystal ◽  
Large Screen ◽  
Projection Display ◽  
Rear Projection

Design of ultra-thin optical systems in large screen projection display

2014 ◽  
Vol 22 (8) ◽  
pp. 2020-2025 ◽  
Author(s):  
吕伟振 Lv Wei-zhen ◽  
刘伟奇 LIU Wei-qi ◽  
魏忠伦 WEI Zhong-lun ◽  
康玉思 KANG Yu-si ◽  
田志辉 TIAN Zhi-hui ◽  
...  
Keyword(s):  
Optical Systems ◽  
Large Screen ◽  
Projection Display ◽  
Large Screen Projection

Development of liquid crystal light valves using Bi12SiO20 as the photoconductor. Part 2: Device performance

1986 ◽  
Vol 133 (1) ◽  
pp. 65
Author(s):  
W.L. Baillie ◽  
P.M. Openshaw ◽  
A.D. Hart ◽  
S.S. Makh
Keyword(s):  
Liquid Crystal ◽  
Device Performance

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

Sign in / Sign up

Export Citation Format

Share Document