High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 μm

Author(s):  
Jongjin G. Kim ◽  
Leon Shterengas ◽  
Ramon U. Martinelli ◽  
Gregory L. Belenky
2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.


2003 ◽  
Vol 83 (10) ◽  
pp. 1926-1928 ◽  
Author(s):  
J. G. Kim ◽  
L. Shterengas ◽  
R. U. Martinelli ◽  
G. L. Belenky

2004 ◽  
Author(s):  
Allan J. Evans ◽  
John E. David ◽  
Lisa C. Doris ◽  
Jae S. Yu ◽  
Steven Slivken ◽  
...  

Laser Physics ◽  
2012 ◽  
Vol 22 (4) ◽  
pp. 712-714 ◽  
Author(s):  
Y. J. Shen ◽  
B. Q. Yao ◽  
X. M. Duan ◽  
Y. L. Ju ◽  
Y. Z. Wang

2011 ◽  
Vol 47 (7) ◽  
pp. 977-983
Author(s):  
Wenqi Ge ◽  
Lu Chai ◽  
Jie Yan ◽  
Minglie Hu ◽  
Chingyue Wang ◽  
...  

2009 ◽  
Vol 45 (16) ◽  
pp. 835 ◽  
Author(s):  
J.A. Gupta ◽  
P.J. Barrios ◽  
G.C. Aers ◽  
P. Waldron ◽  
C. Storey

1998 ◽  
Vol 73 (9) ◽  
pp. 1182-1184 ◽  
Author(s):  
A. Al-Muhanna ◽  
L. J. Mawst ◽  
D. Botez ◽  
D. Z. Garbuzov ◽  
R. U. Martinelli ◽  
...  

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