Effect of electron irradiation on the galvanomagnetic properties of InxBi2−x Te3 semiconductor single crystals

2003 ◽  
Vol 45 (12) ◽  
pp. 2249-2254 ◽  
Author(s):  
A. E. Kar’kin ◽  
V. V. Shchennikov ◽  
B. N. Goshchitskii ◽  
S. E. Danilov ◽  
V. L. Arbuzov ◽  
...  
2005 ◽  
Vol 100 (6) ◽  
pp. 1142-1152 ◽  
Author(s):  
A. E. Karkin ◽  
S. V. Naumov ◽  
B. N. Goshchitskii ◽  
A. M. Balbashov

1990 ◽  
Vol 116 (1) ◽  
pp. 1-15 ◽  
Author(s):  
H. Inui ◽  
H. Mori ◽  
T. Sakata ◽  
H. Fujita

1999 ◽  
Vol 607 ◽  
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
V.V. Belousov ◽  
L.A. Skipetrova

AbstractGalvanomagnetic properties of n-Pb1−xGexTe<Ga>(O.04≤x≤O.08) single crystals have been investigated in the shielded from external background illumination chamber and under controlled illumination from infrared heat source. Low temperature activation range of the impurity conductivity on the dark curves of ρ(l/T) was revealed and attributed to the appearance of gallium-induced deep level EGa in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below Tc=50%60 K, and effect of the persistent photoconductivity at helium temperatures was revealed.


2006 ◽  
Author(s):  
V. F. Lebedev ◽  
S. Yu. Tenyakov ◽  
E. A. Vanina ◽  
I. V. Gopienko ◽  
S. V. Simakov ◽  
...  

2014 ◽  
Vol 4 (4) ◽  
Author(s):  
R. Prozorov ◽  
M. Kończykowski ◽  
M. A. Tanatar ◽  
A. Thaler ◽  
S. L. Bud’ko ◽  
...  

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