Chemical Deposition of Metal Sulfides from Aqueous Solutions: From Thin Films to Colloidal Particles

2020 ◽  
Vol 94 (12) ◽  
pp. 2399-2412
Author(s):  
N. S. Kozhevnikova ◽  
V. F. Markov ◽  
L. N. Maskaeva
Keyword(s):  
Thin Films ◽  
Aqueous Solutions ◽  
Colloidal Particles ◽  
Chemical Deposition ◽  
Metal Sulfides

The Effect of γ-Al2O3, TiO2 and ZrO2 Supports on Hydrodesulfurization Activity of Transition-Metal Sulfides

2008 ◽  
Vol 73 (8-9) ◽  
pp. 945-955 ◽  
Author(s):  
Luděk Kaluža ◽  
Miroslav Zdražil
Keyword(s):  
Transition Metal ◽  
Aqueous Solutions ◽  
Model Reaction ◽  
Metal Sulfides ◽  
Vacuum Impregnation ◽  
Transition Metal Sulfides ◽  
Highly Active ◽  
System A ◽  
Benzothiophene Hydrodesulfurization ◽  
Hydrodesulfurization Activity

The transition metals V, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pd, W, Re, Os, Ir and Pt were deposited from aqueous solutions of their salts onto conventional γ-Al2O3 and unconventional TiO2 and ZrO2 supports by vacuum impregnation and characterized in their sulfided form by a model reaction of benzothiophene hydrodesulfurization. It was found that the TiO2 and ZrO2 supports influenced predominantly positively the resulting activity of relatively low-active metals (V, Cr, Mn, Fe, Co, Ni, Mo, Ru, W and Os), whereas the highly active metals (Rh, Pd, Ir, Pt and Re) were influenced slightly negatively or not at all by those supports compared with the γ-Al2O3-supported system. A significant effect of the supports on the hydrodesulfurization-activity ranking of the transition-metal sulfides studied was ascertained.

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

Annealing effects on the properties of copper oxide thin films prepared by chemical deposition

2005 ◽  
Vol 20 (5) ◽  
pp. 398-401 ◽  
Author(s):  
Necmi Serin ◽  
Tülay Serin ◽  
Şeyda Horzum ◽  
Yasemin Çelik
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Chemical Deposition ◽  
Oxide Thin Films ◽  
Annealing Effects
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