WAVEGUIDING STRUCTURE EXHIBITING VARIOUS NONLINEAR OPTICAL TRANSFER FUNCTIONS REALIZED WITH A WANNIER-STARK MODULATOR CONTAINING AN InGaAs/InP SUPERLATTICE

1995 ◽  
Vol 04 (02) ◽  
pp. 325-336 ◽  
Author(s):  
H. C. NEITZERT ◽  
C. CACCIATORE ◽  
D. CAMPI ◽  
C. RIGO
Keyword(s):  
Nonlinear Optical ◽  
Stark Effect ◽  
Transfer Functions ◽  
Polarized Light ◽  
Optical Power ◽  
Optical Signal ◽  
Signal Frequency ◽  
Frequency Multiplication ◽  
Short Period ◽  
Optical Transfer

We report on the application of a self electro-optic effect device in waveguiding configuration for the generation of a wide variety of different nonlinear optical transfer functions. It makes use of the Wannier-Stark effect in an InGaAs/InP short period superlattice and operates at room temperature for TE-polarized light around 1.55 μm. In particular, optical bistability, optical signal-frequency multiplication and the operation as an optical power discriminator are demonstrated.

Non-uniform optical transfer functions in particle imaging: calibration and application to tomographic reconstruction

2012 ◽  
Vol 24 (2) ◽  
pp. 024009 ◽  
Author(s):  
Daniel Schanz ◽  
Sebastian Gesemann ◽  
Andreas Schröder ◽  
Bernhard Wieneke ◽  
Matteo Novara
Keyword(s):  
Transfer Functions ◽  
Tomographic Reconstruction ◽  
Optical Transfer ◽  
Particle Imaging

The Relations Between the Axial Aberrations of Photographic Lenses and Their Optical Transfer Functions

1966 ◽  
Vol 5 (3) ◽  
pp. 415 ◽  
Author(s):  
K. Rosenhauer ◽  
K.-J. Rosenbruch ◽  
F.-A. Sunder-Plassmann
Keyword(s):  
Transfer Functions ◽  
Optical Transfer

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Optical power handling properties of polymeric nonlinear optical waveguides

1993 ◽  
Vol 74 (8) ◽  
pp. 4871-4876 ◽  
Author(s):  
M. A. Mortazavi ◽  
H. N. Yoon ◽  
C. C. Teng
Keyword(s):  
Optical Waveguides ◽  
Nonlinear Optical ◽  
Optical Power ◽  
Power Handling
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