Characterisation of Liquid Brillouin Media at 532 nm

1997 ◽  
Vol 06 (01) ◽  
pp. 69-79 ◽  
Author(s):  
D. C. Jones
Keyword(s):  
Brillouin Scattering ◽  
Optical Breakdown ◽  
Gain Coefficient ◽  
High Gain ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Phase Conjugate ◽  
Brillouin Gain ◽  
Stimulated Brillouin ◽  
532 Nm

A number of transparent liquids have been evaluated for use in stimulated Brillouin scattering at 532 nm. Measurements were made of frequency shift, SBS threshold, reflectivity and optical breakdown properties. It was found that the alkanes, and in particular n-pentane, performed well and measurements were made of Brillouin gain coefficient and phonon lifetimes. It is suggested that these liquids are promising candidates for use in self-pumped phase conjugate mirrors, high gain Brillouin amplifiers and four-wave mixing mirrors.

scholarly journals Stimulated Brillouin scattering and Brillouin-coupled four-wave-mixing in a silica microbottle resonator

2016 ◽  
Vol 24 (11) ◽  
pp. 12082 ◽  
Author(s):  
Motoki Asano ◽  
Yuki Takeuchi ◽  
Sahin Kaya Ozdemir ◽  
Rikizo Ikuta ◽  
Lan Yang ◽  
...  
Keyword(s):  
Brillouin Scattering ◽  
Stimulated Brillouin Scattering ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Stimulated Brillouin

INFLUENCE OF PIEZOELECTRICITY AND MAGNETIC FIELD ON STIMULATED BRILLOUIN SCATTERING IN III–V SEMICONDUCTORS

2006 ◽  
Vol 15 (04) ◽  
pp. 465-479 ◽  
Author(s):  
M. SINGH ◽  
P. AGHAMKAR ◽  
N. KISHORE ◽  
PRANAY K. SEN
Keyword(s):  
Magnetic Field ◽  
Brillouin Scattering ◽  
Phase Conjugation ◽  
Stimulated Brillouin Scattering ◽  
Gain Coefficient ◽  
Analytical Investigation ◽  
Magnetostatic Field ◽  
Brillouin Gain ◽  
Nonlinear Devices ◽  
Stimulated Brillouin

Using electromagnetic treatment, a detailed analytical investigation of stimulated Brillouin scattering (SBS) has been made for a semiconducting crystal in the presence of an external magnetostatic field. The effect of piezoelectricity (β) and magnetic field [Formula: see text] has been introduced through equation of motion of lattice vibration and Lorentz force, respectively. The analysis is applied to both cases viz. non-piezoelectric (β = 0) and piezoelectric (β ≠ 0) in the absence (B0 =0) and the presence (B0 ≠ 0) of external magnetostatic field. The numerical estimates are made for n-type InSb crystals, taken as representative III–V semiconductor, duly shined upon by pulsed 10.6 μm CO 2 laser. The inclination of applied magnetostatic field with respect to the direction of propagation of pump beam is found to augment the gain coefficient for the onset of stimulated Brillouin scattering. Moreover, the SBS gain coefficient increases with increasing scattering angle and results in a maximum value for the backscattered mode. The backward Brillouin gain is found to be nearly 104 times larger than forward gain when β ≠ 0 and B0 = 10T. The analysis also suggests the possibility of observing optical phase conjugation reflectivity as high as 106 in the weakly piezoelectric doped semiconductors with moderate magnetostatic field. The numerical estimation suggests that piezoelectric doped III–V semiconductors in the presence of magnetic field are candidate materials for fabrication of cubic nonlinear devices.

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