An Improved Tight Binding Band Structure Calculation of (GaAs)n/(AIAs)n(n=1∼4) Superlattices

1987 ◽  
Vol 26 (Part 1, No. 5) ◽  
pp. 690-694 ◽  
Author(s):  
Shigetoshi Nara
2011 ◽  
Vol 25 (03) ◽  
pp. 163-173 ◽  
Author(s):  
RUPALI KUNDU

In this article, we have reproduced the tight-binding π band dispersion of graphene including up to third nearest-neighbors and also calculated the density of states of π band within the same model. The aim was to find out a set of parameters descending in order as distance towards third nearest-neighbor increases compared to that of first and second nearest-neighbors with respect to an atom at the origin. Here we have discussed two such sets of parameters by comparing the results with first principle band structure calculation.1


1995 ◽  
Vol 36 (5) ◽  
pp. 843-848 ◽  
Author(s):  
Na. Amrane ◽  
S. Ait Abderrahmane ◽  
H. Aourag

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