Bias Voltage Dependence of Tunnel Magnetoresistance Effect in Spin-Valve Type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr0.3MnO3Tunnel Junctions

2002 ◽  
Vol 41 (Part 1, No. 3A) ◽  
pp. 1340-1342 ◽  
Author(s):  
Jun Hayakawa ◽  
Satoshi Kokado ◽  
Kenchi Ito ◽  
Mikito Sugiyama ◽  
Hidefumi Asano ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spin Valve ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance ◽  
Bias Voltage Dependence

Inverse TMR Effect in Co0.9Fe0.1/SrTiO3/La0.7Sr0.3MnO3 Tunnel Junctions

2001 ◽  
Vol 690 ◽  
Author(s):  
M. Sugiyama ◽  
H. Asano ◽  
M. Matsui ◽  
J. Hayakawa ◽  
S. Kokado ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Electronic Structures ◽  
Voltage Dependence ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Rutherford Backscattering ◽  
Spin Dependent Transport ◽  
Valve Structure ◽  
Dependent Transport ◽  
Bias Voltage Dependence

ABSTRACTMagnetic tunnel junctions of Co0.9Fe0.1/SrTiO3 (STO)/ La0.7Sr0.3MnO3 (LSMO) with a spin-valve structure having an antiferromagnetic MnIr layer have been fabricated by sputtering. Junction magnetoresistance (MR) behavior and its dependence on the bias voltage are examined for junctions with epitaxial STO barrier formed under different sputtering conditions. Spin dependent transport measurements show that these junctions exhibit spin-valve type MR loops with an inverse (positive) MR of the ratio of 14-22 % at 4.2 K. The inverse MR observed is asymmetric with respect to the bias voltage direction. Stoichiometric STO barrier, as characterized by Rutherford backscattering (RBS) analysis, is found to result in very large asymmetric bias dependence, while the junctions with nonstoichiometric STO barrier exhibit the symmetric bias dependence. Our results suggest that the nonstoichiometry of STO barrier modifies the electronic structures of electrode/barrier interfaces, and thereby reducing the asymmetry of bias voltage dependence of junction MR.

Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions

2010 ◽  
Vol 96 (21) ◽  
pp. 212505 ◽  
Author(s):  
Hiroaki Sukegawa ◽  
Huixin Xiu ◽  
Tadakatsu Ohkubo ◽  
Takao Furubayashi ◽  
Tomohiko Niizeki ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Tunnel Magnetoresistance ◽  
Spinel Mgal2o4 ◽  
Lattice Matched ◽  
Bias Voltage Dependence

Bias Voltage Dependence of Quasiparticle Recombination in STJ Detectors with Killed Electrode

2008 ◽  
Vol 151 (1-2) ◽  
pp. 287-291 ◽  
Author(s):  
V. A. Andrianov ◽  
L. V. Filippenko ◽  
V. P. Gorkov ◽  
V. P. Koshelets
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Bias Voltage Dependence

Bias voltage dependence of tunneling giant magnetoresistance in heterogeneous Fe-SiO/sub 2/ granular films

1999 ◽  
Vol 35 (5) ◽  
pp. 2955-2957 ◽  
Author(s):  
S. Honda ◽  
M. Nawate ◽  
T. Umemoto ◽  
S. Mitsudo ◽  
S. Mitani ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Giant Magnetoresistance ◽  
Voltage Dependence ◽  
Granular Films ◽  
Bias Voltage Dependence
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