Effect of Current Compliance on Resistive Switching Characteristics of Amorphous Ternary Rare Earth Oxide SmGdO3 Thin Films Grown by Pulsed Laser Deposition

2014 ◽  
Vol 61 (6) ◽  
pp. 133-138 ◽  
Author(s):  
P. Misra ◽  
Y. Sharma ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Pulsed Laser ◽  
Rare Earth Oxide ◽  
Laser Deposition ◽  
Current Compliance ◽  
Switching Characteristics

Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

2017 ◽  
Vol 50 (41) ◽  
pp. 415106 ◽  
Author(s):  
P Misra ◽  
V K Sahu ◽  
R S Ajimsha ◽  
A K Das ◽  
B Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Switching Times

Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films

2014 ◽  
Vol 117 (1) ◽  
pp. 197-205 ◽  
Author(s):  
O. G. Pompilian ◽  
G. Dascalu ◽  
I. Mihaila ◽  
S. Gurlui ◽  
M. Olivier ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Pulsed Laser Deposition ◽  
Chalcogenide Glass ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gallium Lanthanum Sulphide ◽  
Rare Earth Doped

Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Rare Metals ◽  
2013 ◽  
Vol 33 (1) ◽  
pp. 75-79 ◽  
Author(s):  
Hong-Bin Zhao ◽  
Hai-Ling Tu ◽  
Feng Wei ◽  
Xin-Qiang Zhang ◽  
Yu-Hua Xiong ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Resistive Switching ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Switching Characteristics

Optical properties of rare-earth doped epitaxial Sr0.5Ba0.5Nb2O6 thin films grown by pulsed laser deposition

2010 ◽  
Vol 519 (1) ◽  
pp. 52-57 ◽  
Author(s):  
Y.B. Yao ◽  
W.C. Liu ◽  
C.L. Mak ◽  
K.H. Wong ◽  
H.L. Tam ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rare Earth ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Rare Earth Doped
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