Selective detection of microcracks under the surface of glass substrates by non-contact stress-induced light-scattering method with temperature variations

Demand for flexible electronics is increasing due to recent global movements related to IoT. In particular, the ultra-thin glass substrate can be bent, its use is expanding for various applications such as thin liquid crystal panels. On the other hand, fine-polishing techniques such as chemical mechanical polishing treatments, are important techniques in glass substrate manufacturing. However, these techniques may cause microcracks under the surface of glass substrates because they use mechanical friction. We propose a novel non-contact thermal stress-induced light-scattering method (N-SILSM) using a heating device for inspecting surfaces to detect polishing-induced microcracks. In this report, we carry out the selective detection of microcracks and tiny particles using a N-SILSM with temperature variation. Our results show that microcracks and tiny particles can be distinguished and measured by a N-SILSM utilizing temperature change, and that microcrack size can be estimated based on the change in light-scattering intensity.

Growth Properties of Carbon Nanowalls on Nickel and Titanium Interlayers

This research is conducted in order to investigate the structural and electrical characteristics of carbon nanowalls (CNWs) according to the sputtering time of interlayers. The thin films were deposited through RF magnetron sputtering with a 4-inch target (Ni and Ti) on the glass substrates, and the growth times of the deposition were 5, 10, and 30 min. Then, a microwave plasma-enhanced chemical vapor deposition (PECVD) system was used to grow CNWs on the interlayer-coated glass substrates by using a mixture of H2 and CH4 gases. The FE-SEM analysis of the cross-sectional and planar images confirmed that the thickness of interlayers linearly increased according to the deposition time. Furthermore, CNWs grown on the Ni interlayer were taller and denser than those grown on the Ti interlayer. Hall measurement applied to measure sheet resistance and conductivity confirmed that the electrical efficiency improved significantly as the Ni or Ti interlayers were used. Additionally, UV-Vis spectroscopy was also used to analyze the variations in light transmittance; CNWs synthesized on Ni-coated glass have lower average transmittance than those synthesized on Ti-coated glass. Based on this experiment, it was found that the direct growth of CNW was possible on the metal layer and the CNWs synthesized on Ni interlayers showed outstanding structural and electrical characterizations than the remaining interlayer type.

Annealing Effect on One Step Electrodeposited CuSbSe2 Thin Films

The purpose of this work is to study the influence of the annealing temperature on the structural, morphological, compositional and optical properties of CuSbSe2 thin films electrodeposited in a single step. CuSbSe2 thin films were grown on fluorine-doped tin oxide (FTO)/glass substrates using the aqueous electrodeposition technique, then annealed in a tube furnace under nitrogen at temperatures spanning from 250 to 500 °C. The resulting films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis, Raman spectroscopy and UV-Vis spectrophotometer. The annealing temperature plays a fundamental role on the films structural properties; in the range 250–350 °C the formation of pure CuSbSe2 phase from electrodeposited binary selenides occurs. From 400 to 500 °C, CuSbSe2 undergoes a preferential phase orientation change, as well as the increasing formation of copper-rich phases such as Cu3SbSe3 and Cu3SbSe4 due to the partial decomposition of CuSbSe2 and to the antimony losses.

Strategies for improved temporal response of glass-based optical switches

We present an optimization of the dynamics of integrated optical switches based on thermal phase shifters. These devices have been fabricated in the volume of glass substrates by femtosecond laser micromachining and are constituted by an integrated Mach–Zehnder interferometer and a superficial heater. Simulations, surface micromachining and innovative layouts allowed us to improve the temporal response of the optical switches down to a few milliseconds. In addition, taking advantage of an electrical pulse shaping approach where an optimized voltage signal is applied to the heater, we proved a switching time as low as 78 µs, about two orders of magnitude shorter with respect to the current state of the art of thermally-actuated optical switches in glass.

Polishing Characteristics and Mechanism of Polishing Glass Substrate Using Suede Pad with Fine Micrometer-Sized Pores

Chemical mechanical polishing (CMP) using a suede polishing pad is an essential fabrication process for glass substrates that require ultra-high planarization. However, the effect of surface asperities of the suede pad on its polishing characteristics is not completely understood because the structure of the suede pad in the thickness direction is not constant, and its surface asperities can easily change during the pad conditioning or marathon polishing processes. In addition, many previous studies have discussed the polishing mechanism using a suede pad; however, these studies used suede pads with a pore size of approximately 100 μm. This paper discusses the polishing characteristics of a suede pad with fine micrometer-sized pores by clarifying the relationships between the removal rate, friction coefficient, pore parameters, and roughness as the pad surface asperities. In this study, a series of marathon polishing tests were performed with and without conditioning. It was discovered that the removal rate was affected not only by the pore parameters but also by the surface roughness of the suede pad with fine pores. The relationship between the removal rate and the friction coefficient changed owing to the influence of pad conditioning, and this change is significant when the break-in conditioning time is short.

Single-Step Fabrication and Characterization of Nanoscale Cu Thinfilms for Optoelectronic Applications

Nanostructured materials with optical transmittance with sufficient electrical conductivity are feasible for the transparent electrical devices and optoelectronic applications. Copper (Cu) possesses inherent superior electrical conductivity. Cu thin films on glass substrates provide the basic design understanding of the transparent electrodes for humidity sensors and solar cells applications. To understand the fundamental fabrication and electrical properties, a single-step facile fabrication approach was applied for Cu nanofilms through the DC sputtering method. Correlation of thickness of Cu nanofilms with optical and electrical properties was established. Parameters such as current, voltage, vacuum pressure, and time of coating were varied to develop different thickness of metal coating. Under optimized conditions of 10−1 torr vacuum, 1.45 KV voltage, and 4–6 min coating time, a conductive path is successfully established. A 1 min coated sample demonstrated resistance of 4000 ohm and conductance of a 6 min coated sample was raised to 56 m-mho. A higher surge of voltage assisted the production of relatively thick and uniform coatings with the crystallite size of 12 nm. The average coating thickness of 19.8 nm and roughness of 4.5 nm was obtained for a 5 min coated sample through AFM analysis. Further, it was observed that uniform nanostructured coating is essential to establish a mean free path of coated particles.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Properties of ZnS1-xFe x thin Films Deposited

Semiconducting ZnS1-xFex thin films were prepared with different substrate temperature on glass substrates from aqueous solution technique. ZnS1-xFex films were prepared, using a aqueous solution containing ethyleneglycol, zinc chloride and sulphur. XRD study shows that the aqueous deposited ZnS1-xFex thin films are polycrystalline hexagonal structure. The effect of Fe concentration on the optical parameters such as absorption coefficient, refractive index, dielectric function, optical conductivity, and reflectivity is also investigated. Results revealed that Cd1-xFexS is a suitable compound for spintronics and optoelectronics devices. A good optical transparency of about 75% in the visible region is observed for all prepared ZnS1-xFex thin films. The direct optical band gap of the deposited ZnS1-xFex thin films with different substrate temperature (380°C – 530°C) were lying in the range 3.27–3.35 eV.

Rapid formation methods of arrays of randomly distributed Au and Ag nanoparticles, their morphologies and optical characteristics

By the method of rapid radiation heating (at a speed of 20-25 K/s) of Au and Ag films with a thickness of 4-35 nm to temperatures of 573-693 K in air and in the process of vacuum deposition of silver on heated (up to 700 K at a heating rate of 10 K/s ) glass substrates formed Au and Ag NPs arrays with nanoparticle sizes from several tens to hundreds of nanometers, the position λSPR of which is in the range of 520-597 nm for Au NPs and 424-509 nm for Ag NPs. It is established that the average size of nanoparticles depends on the thickness of gold and silver films and the annealing temperature. The results testify that glass substrates with arrays of randomly distributed gold NPs can be used as effective SERS-substrates for the investigation of Raman spectra of nanosized (50-100 nm) chalcogenide films.