Topics in Applied Physics - Rare Earth Oxide Thin Films
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Published By Springer Berlin Heidelberg

9783540357964

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Models for ALD and MOCVD Growthof Rare Earth Oxides

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_5 ◽

2006 ◽

pp. 73-86 ◽

Cited By ~ 3

Author(s):

Simon D. Elliott

Keyword(s):

Rare Earth ◽

Rare Earth Oxides

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Fabrication and Characterization of Rare Earth Scandate Thin Films Prepared by Pulsed Laser Deposition

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_8 ◽

2006 ◽

pp. 115-126 ◽

Cited By ~ 1

Author(s):

Jürgen Schubert ◽

Tassilo Heeg ◽

Martin Wagner

Keyword(s):

Thin Films ◽

Rare Earth ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Fabrication And Characterization

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Experimental Determination of the Band Offset of Rare Earth Oxides on Various Semiconductors

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_16 ◽

2006 ◽

pp. 269-283 ◽

Cited By ~ 4

Author(s):

Gabriele Seguini ◽

Michele Perego ◽

Marco Fanciulli

Keyword(s):

Rare Earth ◽

Experimental Determination ◽

Rare Earth Oxides ◽

Band Offset

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Rare Earth Oxides in Microelectronics

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_20 ◽

2006 ◽

pp. 345-365 ◽

Cited By ~ 19

Author(s):

Kuniyuki Kakushima ◽

Kazuo Tsutsui ◽

Sun-Ichiro Ohmi ◽

Parhat Ahmet ◽

V. Ramgopal Rao ◽

...

Keyword(s):

Rare Earth ◽

Rare Earth Oxides

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Requirements of Oxides as Gate Dielectricsfor CMOS Devices

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_21 ◽

2006 ◽

pp. 367-377 ◽

Cited By ~ 2

Author(s):

Gennadi Bersuker ◽

Peter Zeitzoff

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Growth of Oxides with Complex Stoichiometry by the ALD Technique, Exemplified by Growth of La1–x Ca x MnO 3

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_6 ◽

2006 ◽

pp. 87-100 ◽

Cited By ~ 2

Author(s):

Ola Nilsen ◽

Martin Lie ◽

Helmer F. Fjellvåg ◽

Arne Kjekshus

Keyword(s):

Complex Stoichiometry

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Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_12 ◽

2006 ◽

pp. 179-202

Author(s):

Gerald Lucovsky ◽

James C. Phillips

Keyword(s):

Rare Earth ◽

Transition Metal ◽

Gate Stacks ◽

Strain Relief ◽

Rare Earth Atom ◽

High K ◽

Dielectric Interfaces

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Requirements of Precursors for MOCVDand ALD of Rare Earth Oxides

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_4 ◽

2006 ◽

pp. 53-72 ◽

Cited By ~ 9

Author(s):

Helen C. Aspinall

Keyword(s):

Rare Earth ◽

Rare Earth Oxides

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MOCVD Growth of Rare Earth Oxides:The Case of the Praseodymium/Oxygen System

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_3 ◽

2006 ◽

pp. 33-51 ◽

Cited By ~ 1

Author(s):

Raffaella Lo Nigro ◽

Graziella Malandrino ◽

Roberta G. Toro ◽

Ignazio L. Fragalà

Keyword(s):

Rare Earth ◽

Mocvd Growth ◽

Oxygen System

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Sesquioxides as Host Materialsfor Rare-Earth-Doped Bulk Lasersand Active Waveguides

Topics in Applied Physics - Rare Earth Oxide Thin Films ◽

10.1007/11499893_24 ◽

2006 ◽

pp. 401-422 ◽

Cited By ~ 4

Author(s):

Sebastian Bär ◽

Hanno Scheife ◽

Klaus Petermann ◽

Günter Huber

Keyword(s):

Rare Earth ◽

Rare Earth Doped

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Topics in Applied Physics - Rare Earth Oxide Thin FilmsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Models for ALD and MOCVD Growthof Rare Earth Oxides

Fabrication and Characterization of Rare Earth Scandate Thin Films Prepared by Pulsed Laser Deposition

Experimental Determination of the Band Offset of Rare Earth Oxides on Various Semiconductors

Rare Earth Oxides in Microelectronics

Requirements of Oxides as Gate Dielectricsfor CMOS Devices

Growth of Oxides with Complex Stoichiometry by the ALD Technique, Exemplified by Growth of La1–x Ca x MnO 3

Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics

Requirements of Precursors for MOCVDand ALD of Rare Earth Oxides

MOCVD Growth of Rare Earth Oxides:The Case of the Praseodymium/Oxygen System

Sesquioxides as Host Materialsfor Rare-Earth-Doped Bulk Lasersand Active Waveguides

Topics in Applied Physics - Rare Earth Oxide Thin Films
Latest Publications