Microstructural Development in the Surface Region during Oxidation of Iron‐Manganese‐Nickel‐Silicon Alloys

1986 ◽  
Vol 133 (5) ◽  
pp. 1042-1048 ◽  
Author(s):  
J. M. Oh ◽  
M. J. McNallan ◽  
Wayne E. King
Keyword(s):  
Surface Region ◽  
Microstructural Development ◽  
Silicon Alloys ◽  
Iron Manganese ◽  
Nickel Silicon

Radiation-Induced Segregation in Nickel-Silicon Alloys

2009 ◽  
pp. 184-184-10 ◽  
Author(s):  
LE Rehn ◽  
PR Okamoto ◽  
DI Potter ◽  
H Wiedersich
Keyword(s):  
Silicon Alloys ◽  
Radiation Induced ◽  
Nickel Silicon

The surface tension of liquid nickel-silicon alloys

1965 ◽  
Vol 4 (3) ◽  
pp. 238-240 ◽  
Author(s):  
M. I. Vasiliu ◽  
V. N. Eremenko
Keyword(s):  
Surface Tension ◽  
Liquid Nickel ◽  
Silicon Alloys ◽  
Nickel Silicon

Microstructural development in the near-surface region during thermal annealing of Al2O3 implanted with cationic impurities

1990 ◽  
Vol 5 (7) ◽  
pp. 1502-1519 ◽  
Author(s):  
G. C. Farlow ◽  
P. S. Sklad ◽  
C. W. White ◽  
C. J. McHargue
Keyword(s):  
Phase Diagram ◽  
Single Crystal ◽  
Solid Solutions ◽  
Dose Range ◽  
Equilibrium Phase ◽  
Surface Region ◽  
Equilibrium Phase Diagram ◽  
Microstructural Development ◽  
Near Surface ◽  
Reducing Environment

Single-crystal Al2O3 was implanted with cationic impurities in the dose range 1–4 ⊠ 1016/cm2 and subsequently annealed in either an oxidizing or reducing environment. Following annealing at 1200°C or higher, crystalline precipitates or solid solutions are observed, which are consistent with what is expected from the equilibrium phase diagram.

The effect of primary recoil spectrum on radiation induced segregation in nickel-silicon alloys

1983 ◽  
Vol 118 (1) ◽  
pp. 83-90 ◽  
Author(s):  
R.S. Averback ◽  
L.E. Rehn ◽  
W. Wagner ◽  
P. Ehrhart
Keyword(s):  
Silicon Alloys ◽  
Radiation Induced ◽  
Recoil Spectrum ◽  
Nickel Silicon
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