Growth and Characterization of ZnO Nanorod Array Using a Low Temperature Method: Comparison of MOCVD with Solution Method

CrystEngComm ◽  
2016 ◽  
Vol 18 (42) ◽  
pp. 8277-8283 ◽  
Author(s):  
Jianan Sun ◽  
Shouqin Tian ◽  
Xiangying Cai ◽  
Dehua Xiong ◽  
Santosh Kumar Verma ◽  
...  

2014 ◽  
Vol 53 (22) ◽  
pp. 9383-9390 ◽  
Author(s):  
Ajaya Kumar Singh ◽  
Gautam Sheel Thool ◽  
Prakriti Ranjan Bangal ◽  
Sunkara Sakunthala Madhavendra ◽  
Surya Prakash Singh

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49613-49617 ◽  
Author(s):  
Rui Li ◽  
Chunyan Yu ◽  
Hailiang Dong ◽  
Wei Jia ◽  
Tianbao Li ◽  
...  

A Ga-doped ZnO nanorod array has been synthesized on a p-GaN/Al2O3 substrate by a hydrothermal method at low temperature.


2010 ◽  
Vol 257 (4) ◽  
pp. 1263-1266 ◽  
Author(s):  
Yiting Liu ◽  
Aimin Liu ◽  
Weifeng Liu ◽  
Zengquan Hu ◽  
Yongchang Sang

2005 ◽  
Vol 879 ◽  
Author(s):  
Young Jung Kim ◽  
Huamei Shang ◽  
Guozhong Cao

AbstractThis paper reports direct growth of [001] ZnO nanorod arrays on ITO substrate from aqueous solution with electric field assisted nucleation, followed with thermal annealing. Xray diffraction analyses revealed that nanorods have wurtzite crystal structure. The diameter of ZnO nanorods was 60 ∼ 300 nm and the length was up to 2.5 μm depending on the growth condition. Photoluminescence spectra showed a broad emission band spreading from 500 to 870 nm, which suggests that ZnO nanorods have a high density of oxygen interstitials. Low and nonlinear electrical conductivity of ZnO nanorod array was observed, which was ascribed to non-ohmic contact between top electrode and ZnO nanorods and the low concentration of oxygen vacancies.


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