The controlled growth of indium selenides has attracted considerable research interests in condensed matter physics and materials science yet remains a challenge due to the complexity of the indium–selenium phase diagram. Here, we demonstrate the successful growth of indium selenides in a controllable manner using the high-pressure and high-temperature growth technique. The γ-InSe and α-In2Se3 crystals with completely different stoichiometries and stacking manner of atomic layers have been controlled grown by subtle tuning growth temperature, duration time, and growth pressure. The as-grown γ-InSe crystal features a semiconducting property with a prominent photoluminescence peak of ∼1.23 eV, while the α-In2Se3 crystal is ferroelectric. Our findings could lead to a surge of interest in the development of the controlled growth of high-quality van der Waal crystals using the high-pressure and high-temperature growth technique and will open perspectives for further investigation of fascinating properties and potential practical application of van der Waal crystals.
The platinum group metals (PGM, Pd, Pt, Ir, etc.) possess unique chemical and physical properties, the properties often vary dramatically with their size, morphology, crystal structure, phase and composition. However,...
Herein, we demonstrate a chemical vapor deposition route to controlled growth of large scale MoS2/MoSe2 vertical van der Waals heterostructures on molten glass substrate using water as the oxidizing chemical...
For a mixture of interacting Bose gases initially prepared in a regime of condensation (uncorrelation), it is proved that in the course of the time evolution observables of disjoint sets of particles of each species have correlation functions that remain asymptotically small in the total number of particles and display a controlled growth in time. This is obtained by means of ad hoc estimates of Lieb–Robinson type on the propagation of the interaction, established here for the multi-component Bose mixture.
Controlled Growth of Indium Selenides by High-Pressure and High-Temperature Method