(Invited) Nanostructures and Crystal Defects in Thick GaN and SiC
Epitaxial Layers for Power Electronic Switches
1986 ◽
Vol IA-22
(3)
◽
pp. 471-477
◽
1994 ◽
Vol 23
(11)
◽
pp. 1221-1227
◽
Keyword(s):
1988 ◽
Vol 7
(3)
◽
pp. 146-148
Keyword(s):
Keyword(s):