(Invited) Prospects for MOCVD Growth of GaN for 10kV Power PN Diodes
Keyword(s):
Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231
Keyword(s):
2015 ◽
Vol 2015
(26)
◽
pp. 4362-4372
◽
2012 ◽
Vol 1
(1)
◽
pp. P46-P53
◽
1983 ◽
Vol 22
(Part 2, No. 10)
◽
pp. L630-L632
◽
Keyword(s):
2006 ◽
Vol 287
(2)
◽
pp. 550-553
◽
Keyword(s):
1993 ◽
Vol 22
(8)
◽
pp. 879-885
◽
Keyword(s):
2014 ◽
Vol 393
◽
pp. 81-84
◽
MOCVD growth and characterisation of GaAlAs/GaAs double heterostructures for opto-electronic devices
1981 ◽
Vol 55
(1)
◽
pp. 223-228
◽