MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.10.030 ◽

2006 ◽

Vol 287 (2) ◽

pp. 550-553 ◽

Author(s):

Y.A. Chang ◽

J.T. Chu ◽

C.T. Ko ◽

H.C. Kuo ◽

C.F. Lin ◽

...

Keyword(s):

Cavity Surface ◽

Mocvd Growth ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Highly Strained ◽

Vertical Cavity

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Multiple wavelength vertical-cavity surface-emitting laser arrays with use of surface-controlled MOCVD growth rate enhancement and reduction

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics ◽

10.1109/cleo.1997.603160 ◽

2005 ◽

Author(s):

G.G. Ortiz ◽

C.P. Hains ◽

S. Luong ◽

J. Cheng ◽

H.Q. Hou ◽

...

Keyword(s):

Growth Rate ◽

Cavity Surface ◽

Laser Arrays ◽

Rate Enhancement ◽

Mocvd Growth ◽

Multiple Wavelength ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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Modulation characteristics of highly strained 1100 nm GaInAs/GaAs vertical cavity surface emitting laser on GaAs (311)B

Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557) ◽

10.1109/cleopr.2001.971107 ◽

2002 ◽

Author(s):

M. Arai ◽

N. Nishiyama ◽

M. Azuchi ◽

A. Matsutani ◽

F. Koyama ◽

...

Keyword(s):

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Highly Strained ◽

Vertical Cavity

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Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.954136 ◽

2001 ◽

Vol 7 (2) ◽

pp. 242-248 ◽

Author(s):

N. Niskiyama ◽

M. Arai ◽

S. Shinada ◽

M. Azuchi ◽

T. Miyamoto ◽

...

Keyword(s):

Quantum Well ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Highly Strained ◽

Vertical Cavity

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1.1-1.2 μm multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) ◽

10.1109/leos.2001.968958 ◽

2002 ◽

Author(s):

M. Arai ◽

T. Kondo ◽

N. Nishiyama ◽

A. Matsutani ◽

T. Miyamoto ◽

...

Keyword(s):

Cavity Surface ◽

Laser Array ◽

Patterned Substrate ◽

Multiple Wavelength ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Highly Strained ◽

Vertical Cavity

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MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27μm emission

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.08.092 ◽

2004 ◽

Vol 272 (1-4) ◽

pp. 538-542 ◽

Author(s):

H.C. Kuo ◽

H.H. Yao ◽

Y.H. Chang ◽

Y.A. Chang ◽

M.Y. Tsai ◽

...

Keyword(s):

Quantum Well ◽

Cavity Surface ◽

Mocvd Growth ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Highly Strained ◽

Vertical Cavity

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Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l54 ◽

2006 ◽

Vol 45 (No. 2) ◽

pp. L54-L56 ◽

Author(s):

I-Liang Chen ◽

Wei-Chou Hsu ◽

Tsin-Dong Lee ◽

Hao-Chung Kuo ◽

Ke-Hua Su ◽

...

Keyword(s):

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Highly Strained ◽

Vertical Cavity ◽

Metalorganic Chemical

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Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction

IEEE Photonics Technology Letters ◽

10.1109/68.605502 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1069-1071 ◽

Author(s):

G.G. Ortiz ◽

S.Q. Luong ◽

S.Z. Sun ◽

J. Cheng ◽

H.Q. Hou ◽

...

Keyword(s):

Growth Rate ◽

Cavity Surface ◽

Laser Arrays ◽

Rate Enhancement ◽

Mocvd Growth ◽

Multiple Wavelength ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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MOCVD growth of GaAs/AlGaAs wavelength resonant periodic gain vertical cavity surface-emitting laser

Electronics Letters ◽

10.1049/el:19890368 ◽

1989 ◽

Vol 25 (8) ◽

pp. 538 ◽

Author(s):

C.F. Schaus ◽

H.E. Schaus ◽

S. Sun ◽

M.Y.A. Raja ◽

S.R.J. Brueck

Keyword(s):

Cavity Surface ◽

Mocvd Growth ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/jstqe.2002.800844 ◽

2002 ◽

Vol 8 (4) ◽

pp. 811-816 ◽

Author(s):

M. Arai ◽

T. Kondo ◽

A. Matsutani ◽

T. Miyamoto ◽

F. Koyama

Keyword(s):

Quantum Wells ◽

Cavity Surface ◽

Laser Array ◽

Patterned Substrate ◽

Multiple Wavelength ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Highly Strained ◽

Vertical Cavity

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Wavelength-division multiplexing vertical-cavity surface emitting laser arrays fabricated by selective area MOCVD growth

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) ◽

10.1109/leos.1998.739441 ◽

2002 ◽

Author(s):

H.Q. Hou ◽

K.D. Choquette ◽

M.E. Coltrin ◽

B.E. Hammons ◽

K.M. Geib

Keyword(s):

Wavelength Division Multiplexing ◽

Cavity Surface ◽

Laser Arrays ◽

Wavelength Division ◽

Mocvd Growth ◽

Selective Area ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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