Realization of Broad-Spectrum Using Chirped Multi-Quantum Well Structures in AlGaInP-Based Light-Emitting Diodes

We studied broad-spectrum light emitting diodes appropriate for special lighting applications in terms of their optical behaviors and device performances according to the chirped multi-quantum well structures. As the well thickness from 1 st to 3rd well was changed from 6 nm to 15 nm and repeated three times, the electroluminescent spectrum was broadened by 65% and the light output power was increased by 8% in comparison to light emitting diodes having conventional multi-quantum well structures. In the case of the chirped multi-quantum well structures having sequentially decreasing the well thickness from 15 nm to 6 nm and repeating three times, the optical output power was decreased by 5% due to the carrier leakage out of the active region.