Gas Field Ionization Sources

Author(s):  
Richard Forbes
2019 ◽  
Vol 25 (1) ◽  
pp. 105-114 ◽  
Author(s):  
Hiroyasu Shichi ◽  
Shinichi Matsubara ◽  
Tomihiro Hashizume

AbstractA scanning ion beam instrument equipped with a gas field ionization source (GFIS) has been commercialized, but only helium and neon are currently available as GFISs. In this study, the characteristics of neon, argon, and krypton ion emissions from a single-atom tip are compared, specifically for faster fabrication by milling of a silicon sample. Although the boiling point of argon is about 87 K, our experiments on characterizing argon ion emission can be carried out at temperatures of about 50 K at an argon gas pressure lower than 0.1 Pa. Argon exhibits ion current characteristics, as a function of tip voltage, between those of neon and krypton. The value obtained by multiplying the ion emission current by the sputtering yield is suitable for a figure of merit (FOM) for faster fabrication. The FOM for argon is the highest among the three ion species. This value must be extensively evaluated from the viewpoint of practical nano-fabrication application. The instabilities of neon, argon, and krypton ion currents (3σ) become as low as 8% in 1 h, which is sufficient for fabrication applications. We conclude that an argon or krypton GFIS ion beam instrument will be a useful tool for nano-fabrication.


2017 ◽  
Vol 56 (6S1) ◽  
pp. 06GC01 ◽  
Author(s):  
Hiroyasu Shichi ◽  
Shinichi Matsubara ◽  
Tomihiro Hashizume

2018 ◽  
Vol 18 (15) ◽  
pp. 6092-6096 ◽  
Author(s):  
Parsoua Abedini Sohi ◽  
Mojtaba Kahrizi

Author(s):  
Jon Orloff ◽  
Mark Utlaut ◽  
Lynwood Swanson

1977 ◽  
Vol 49 (13) ◽  
pp. 2121-2122 ◽  
Author(s):  
J. H. McReynolds ◽  
N. W. Flynn ◽  
R. R. Sperry ◽  
D. Fraisse ◽  
M. Anbar

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