AbstractOctave-spanning frequency comb generation in the deep mid-infrared (>5.5 μm) typically requires a high pump power, which is challenging because of the limited power of narrow linewidth lasers at long wavelengths. We propose twofold dispersion engineering for a Ge-on-Si microcavity to enable both dispersion flattening and dispersion hybridization over a wide band from 3.5 to 10 μm. A two-octave mode-locked Kerr frequency comb can be generated from 2.3 to 10.2 μm, with a pump power as low as 180 mW. It has been shown that dispersion flattening greatly enhances the spectral broadening of the generated comb, whereas dispersion hybridization improves its spectral flatness.
Silicon-Based Parametric Frequency Combs for the Mid-IR