Measurement of excitation and melting processes of the solid silicon surface excited by ultra-short laser pulses

Author(s):  
T. Yagi ◽  
K. Takakusaki ◽  
R. Inoue
2004 ◽  
Vol 22 (1) ◽  
pp. 19-24 ◽  
Author(s):  
F. PEGORARO ◽  
S. ATZENI ◽  
M. BORGHESI ◽  
S. BULANOV ◽  
T. ESIRKEPOV ◽  
...  

Energetic ion beams are produced during the interaction of ultrahigh-intensity, short laser pulses with plasmas. These laser-produced ion beams have important applications ranging from the fast ignition of thermonuclear targets to proton imaging, deep proton lithography, medical physics, and injectors for conventional accelerators. Although the basic physical mechanisms of ion beam generation in the plasma produced by the laser pulse interaction with the target are common to all these applications, each application requires a specific optimization of the ion beam properties, that is, an appropriate choice of the target design and of the laser pulse intensity, shape, and duration.


2007 ◽  
Author(s):  
Tatiana E. Itina ◽  
Mikhail E. Povarnitsyn ◽  
Karine Gouriet ◽  
Sylvie Noël ◽  
Jörg Hermann

2000 ◽  
Vol 61 (3) ◽  
Author(s):  
H. C. Day ◽  
Bernard Piraux ◽  
R. M. Potvliege

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.


2000 ◽  
Vol 7 (5) ◽  
pp. 2232-2240 ◽  
Author(s):  
V. M. Malkin ◽  
G. Shvets ◽  
N. J. Fisch

2018 ◽  
Vol 25 (8) ◽  
pp. 083113 ◽  
Author(s):  
M. Tayyab ◽  
S. Bagchi ◽  
J. A. Chakera ◽  
R. A. Khan ◽  
P. A. Naik

1993 ◽  
Vol 48 (5) ◽  
pp. 3741-3756 ◽  
Author(s):  
A. Keller ◽  
O. Atabek

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