scholarly journals Monolithic dual-mode distributed feedback semiconductor laser for tunable continuous-wave terahertz generation

2009 ◽  
Vol 17 (16) ◽  
pp. 13851 ◽  
Author(s):  
Namje Kim ◽  
Jaeheon Shin ◽  
Eundeok Sim ◽  
Chul Wook Lee ◽  
Dae-Su Yee ◽  
...  
2014 ◽  
Vol 39 (22) ◽  
pp. 6403 ◽  
Author(s):  
Haifeng Shao ◽  
Shahram Keyvaninia ◽  
Mathias Vanwolleghem ◽  
Guillaume Ducournau ◽  
Xiaoqing Jiang ◽  
...  

2012 ◽  
Vol 20 (16) ◽  
pp. 17496 ◽  
Author(s):  
Namje Kim ◽  
Sang-Pil Han ◽  
Han-Cheol Ryu ◽  
Hyunsung Ko ◽  
Jeong-Woo Park ◽  
...  

2014 ◽  
Vol 32 (20) ◽  
pp. 3461-3467 ◽  
Author(s):  
Steven Jones ◽  
Jae-Young Kim ◽  
Yoshiyuki Doi ◽  
Takashi Yamada ◽  
Nobutatsu Koshobu ◽  
...  

CLEO: 2014 ◽  
2014 ◽  
Author(s):  
Hiroyoshi Togo ◽  
Steven Jones ◽  
JaeYoung Kim ◽  
Yoshiyuki Doi ◽  
Takashi Yamada ◽  
...  

2021 ◽  
Vol 11 (4) ◽  
pp. 1531
Author(s):  
Chunkao Ruan ◽  
Yongyi Chen ◽  
Li Qin ◽  
Peng Jia ◽  
Yugang Zeng ◽  
...  

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.


2017 ◽  
Vol 9 (4) ◽  
pp. 131 ◽  
Author(s):  
Mohammed Mehdi Bouchene ◽  
Rachid Hamdi ◽  
Qin Zou

We propose a novel semiconductor laser structure. It is composed of three cascaded active sections: a Fabry-Pérot laser section sandwiched between two gain-coupled distributed feedback (DFB) laser sections. We have modeled this multi-section structure. The simulation results show that compared with index- and gain-coupled DFB lasers, a significant reduction in the longitudinal spatial-hole burning can be obtained with the proposed device, and that this leads to a stable single longitudinal mode operation at relatively high optical power with a SMSR exceeding 56dB. Full Text: PDF ReferencesL.A. Coldren, "Monolithic tunable diode lasers", IEEE J. Select. Topics Quant. Electron. 6, 988 (2000) CrossRef O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, B. Stalnacke, L. Backbom, "30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 [micro sign]m wavelength", Electron. Lett. 33(6), 488 (1997). CrossRef N. Kim, J. Shin, E. Sim, C.W. Lee, D.-S. Yee, M.Y. Jeon, Y. Jang, K.H. Park, "Monolithic dual-mode distributed feedback semiconductor laser for tunable continuous-wave terahertz generation", Opt. Expr. 17(16), 13851 (2009). CrossRef M.J. Wallace, R. ORreilly Meehan, R.R Enright, F. Bello, D. Mccloskey, B. Barabadi, E.N. Wang, J.F. Donegan, "Athermal operation of multi-section slotted tunable lasers", Opt. Expr. 25(13), 14426 (2017). CrossRef J.E. Carroll, J.E.A. Whiteaway, R.G.S. Plumb, "Distributed Feedback Semiconductor Lasers", Distributed feedback semiconductor lasers (IEE and SPIE, 1998). CrossRef H. Ghafour-Shiraz, Distributed Feedback Laser Diodes and Optical Tunable Filters (Wiley, 2003). CrossRef D.D. Marcenac, Ph.D dissertation (University of Cambridge, 1993). DirectLink L.M. Zhang, J.E. Carroll, C. Tsang, "Dynamic response of the gain-coupled DFB laser", IEEE J. Quant. Electr. 29, 1722 (1993). CrossRef W. Li, W.-P. Huang, X. Li, J. Hong, "Multiwavelength gain-coupled DFB laser cascade: design modeling and simulation", IEEE J. Quant. Electro. 36(10), 1110 (2000). CrossRef B.M. Mehdi, H. Rachid, in Proc. 3rd Intern. Conf. on Embedded Systems in Telecomm. and Instrument., Annaba, Algeria (2016). DirectLinkC. Henry, "Theory of the linewidth of semiconductor lasers", IEEE J.Quant. Electr. QE-18, 259 (1982). CrossRef K. Takaki, T. Kise, K. Maruyama, N. Yamanaka, M. Funabashi, A. Kasukawa, "Reduced linewidth re-broadening by suppressing longitudinal spatial hole burning in high-power 1.55-/spl mu/m continuous-wave distributed-feedback (CW-DFB) laser diodes", IEEE J. Quant. Electr. 39, 1060 (2003) CrossRef


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