Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

A convenient, simple method is proposed to measure the front facet temperature, which is the highest temperature in the semiconductor laser diode (LD), of a GaAs-based laser by employing thermoreflectance technique. Using an optical system featured in fiber connection, we measured the facet reflectivity of the 808-nm AlGaInAs/AlGaAs LD, which gives information about the temperature of the output facet. The fiber system operates at the wavelength of 1550 nm which avoids the absorption of the probe beam by the tested LD and consists of a fiber-coupled 1550 nm laser illuminant and photodiode. All optical elements in the system are connected by the fibers. The current signal collected from the photodiode is related to the facet reflectivity and represents facet temperature. We compared the facet temperatures determined by thermoreflectance technique with the cavity temperature obtained by forward-voltage method and found that the former is as much as three times as the latter.

Geometry Monitoring of Rotating Parts of Power Unit with an Adapted Doppler Preprocessor

Current work is devoted to the development of a device for monitoring the dynamic shape of a power unit. The work is based on the FMCW method. The light source uses a low-coherence semiconductor laser diode. Signal processing is performed on an adapted Doppler processor. The paper describes the methods, hardware and signal processing algorithms.

Statistics of the Optical Phase of a Gain-Switched Semiconductor Laser for Fast Quantum Randomness Generation

The statistics of the optical phase of the light emitted by a semiconductor laser diode when subject to periodic modulation of the applied bias current are theoretically analyzed. Numerical simulations of the stochastic rate equations describing the previous system are performed to describe the temporal dependence of the phase statistics. These simulations are performed by considering two cases corresponding to random and deterministic initial conditions. In contrast to the Gaussian character of the phase that has been assumed in previous works, we show that the phase is not distributed as a Gaussian during the initial stages of evolution. We characterize the time it takes the phase to become Gaussian by calculating the dynamical evolution of the kurtosis coefficient of the phase. We show that, under the typical gain-switching with square-wave modulation used for quantum random number generation, quantity is in the ns time scale; that corresponds to the time it takes the system to lose the memory of the distribution of the initial conditions. We compare the standard deviation of the phase obtained with random and deterministic initial conditions to show that their differences become more important as the modulation speed is increased.

Analysis of Void Formation Mechanism in the Vacuum Reflow Soldering Process of Semiconductor Laser Diode

In this paper, the vacuum reflow soldering technology for semiconductor laser chips in optoelectronic devices was studied and analyzed in a systematic manner. Through the study on the key elements in the reflow soldering process, such as the selection of solders, <a>chamber</a> vacuum, flux, and the pressure applied by the fixture on the chip, this paper focused on exploring the formation mechanism of voids in the solder layer when the device was resoldered. Also, the change in the movement of gas bubbles in the voids with changing reflow oven chamber conditions and its underlying law were analyzed, by preparing 200 C-package semiconductor laser diodes and verifying the reliability and stability of the theoretical analysis through inspection and test aging. which could provide a theoretical basis for the use of the vacuum reflow soldering technology to reduce the void rate in the soldering process of devices.

Analysis of Void Formation Mechanism in the Vacuum Reflow Soldering Process of Semiconductor Laser Diode

In this paper, the vacuum reflow soldering technology for semiconductor laser chips in optoelectronic devices was studied and analyzed in a systematic manner. Through the study on the key elements in the reflow soldering process, such as the selection of solders, <a>chamber</a> vacuum, flux, and the pressure applied by the fixture on the chip, this paper focused on exploring the formation mechanism of voids in the solder layer when the device was resoldered. Also, the change in the movement of gas bubbles in the voids with changing reflow oven chamber conditions and its underlying law were analyzed, by preparing 200 C-package semiconductor laser diodes and verifying the reliability and stability of the theoretical analysis through inspection and test aging. which could provide a theoretical basis for the use of the vacuum reflow soldering technology to reduce the void rate in the soldering process of devices.

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

Kinetics of luminescence calcium gallate activated by Yb3+, Er3+ ions

The paper presents the results of a study of the luminescent properties of calcium gallate activated by trivalent rare earth ions Yb3+ and Er3+. IR luminescence spectra of samples with a single activator Ca1‑хYbxGa2O4,Ca1‑хErxGa2O4 were studied when excited by radiation sources with a wavelength of 940 and 790 nm, respectively. The dependence of the luminescence intensity of samples on the concentration of rare earth ions is obtained. When the two-activator composition of Ca1‑х‑yYbxEryGa2O4 is excited by a semiconductor laser diode with a wavelength of 940 nm, IR luminescence is registered in the regions of 980-1100 nm and 1450-1670 nm. The radiation in these bands corresponds to electronic transitions in Yb3+ and Er3+ ions, respectively. For a luminescence band with a maximum at a wavelength of 1540 nm, the excitation spectra were measured, the maximum intensity is at the wavelengths: 930, 941, 970, 980 nm. The dependence of the IR luminescence intensity of a solid solution of Ca1‑х‑yYbxEryGa2O4 on the concentration of Er3+ ions was studied. With an increase in the concentration of Er3+ ions in the luminescence spectra, there is a redistribution in the intensity of the bands belonging to Yb3+ and Er3+ ions, which indicates the presence of energy transfer processes between these ions. The kinetics of IR luminescence attenuation was studied for series with one and two activators: Ca1‑хYbxGa2O4,Ca1‑хErxGa2O4, Ca1‑х‑yYbxEryGa2O4. It is established that the luminescence attenuation occurs mainly according to the exponential law, which indicates the predominance of the intracenter luminescence mechanism in the studied structures. Based on the analysis of the excitation and luminescence spectra of experimental samples, conclusions are made about the interaction of Yb3+ and Er3+ activator ions in the crystal lattice of calcium gallate.