Reliable 1.5-μm buried heterostructure separate confinement multiple quantum well lasers entirely grown by metal-organic vapor phase epitaxy

1990 ◽  
Author(s):  
D. M. COOPER ◽  
M. STEVENSON ◽  
R. M. REDSTALL ◽  
N. FLETCHER ◽  
L. D. WESTBROOK ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Organic Vapor ◽  
Metal Organic ◽  
Buried Heterostructure

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL10 ◽  
Author(s):  
Liyang Zhang ◽  
Ruben R. Lieten ◽  
Magdalena Latkowska ◽  
Michał Baranowski ◽  
Robert Kudrawiec ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Optical Characterization ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Organic Vapor ◽  
Metal Organic

Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy

1997 ◽  
Vol 81 (4) ◽  
pp. 1905-1915 ◽  
Author(s):  
R. Y.-F. Yip ◽  
A. Aït-Ouali ◽  
A. Bensaada ◽  
P. Desjardins ◽  
M. Beaudoin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Vapor Phase Epitaxy ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
Organic Vapor ◽  
Relaxation Effects ◽  
Metal Organic

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Kuramata ◽  
K. Domen ◽  
R. Soejima ◽  
K. Horino ◽  
S. Kubota ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Pressure ◽  
Threshold Current ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Magnesium Doping ◽  
Organic Vapor ◽  
Metal Organic

AbstractWe report the crystal growth and the characteristics of InGaN multiple quantum well (MQW) laser diodes grown on a 6H-SiC substrate using a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We discuss the buffer layer, the control of InGaN and AlGaN alloy composition, the magnesium doping of GaN and AlGaN, and the characteristics of the MQW structure. We also demonstrate the room-temperature pulsed operation of the laser diode. The threshold voltage was reduced to 15 V by improving the p-contact resistance. The threshold current was reduced to 500 mA by changing the MQW structure and employing high reflection coating.

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