Theoretical and Experimental Study of a Low-Temperature-Grown GaAs Photoconductive Switch Under High Voltage Bias

1999 ◽  
Author(s):  
N. Zamdmer ◽  
Qing Hu ◽  
K. A. McIntosh ◽  
S. Verghese
Keyword(s):  
Experimental Study ◽  
Low Temperature ◽  
High Voltage ◽  
Photoconductive Switch ◽  
Voltage Bias ◽  
Low Temperature Grown Gaas

Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch

2002 ◽  
Vol 19 (4) ◽  
pp. 557-559 ◽  
Author(s):  
Lin Wei-Zhu ◽  
Liu Zhi-Gang ◽  
Liao Rui ◽  
Zhang Hai-Chao ◽  
Guo Bing ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoconductive Switch ◽  
Low Temperature Grown Gaas

High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

1990 ◽  
Vol 37 (12) ◽  
pp. 2493-2498 ◽  
Author(s):  
M.Y. Frankel ◽  
J.F. Whitaker ◽  
G.A. Mourou ◽  
F.W. Smith ◽  
A.R. Calawa
Keyword(s):  
Low Temperature ◽  
High Voltage ◽  
Low Temperature Grown Gaas

Picosecond High-Voltage Pulses Generation Using Low-Temperature (LT) GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
T. Motet ◽  
J. Nees ◽  
S. Williamson ◽  
G. Mourou
Keyword(s):  
Low Temperature ◽  
Pulse Shape ◽  
Laser Pulses ◽  
Full Width ◽  
Half Maximum ◽  
Photoconductive Switch ◽  
Electrical Pulses ◽  
Fs Laser ◽  
Temporal Pulse ◽  
Low Temperature Grown Gaas

ABSTRACTWe report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4 ps Full-Width-at-Half-Maximum using pulse biased Low-Temperature-grown GaAs photoconductive switch triggered by submicrojoule, 150 fs laser pulses. Dependence of the temporal pulse shape on both the electric field and the optical energy is observed and discussed.

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