scholarly journals Row of Dislocation loops as a Vacancy Source in Ultrahigh-Purity Aluminum Single Crystals with a Low Dislocation Density

2014 ◽  
Vol 39 (2) ◽  
pp. 169-172 ◽  
Author(s):  
Kaoru MIZUNO ◽  
Kimihiko MORIKAWA ◽  
Hiroyuki OKAMOTO ◽  
Eiji HASHIMOTO
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Dislocation Loops ◽  
Low Dislocation Density

Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

1989 ◽  
Author(s):  
M. Tatsumi ◽  
T. Kawase ◽  
T. Araki ◽  
N. Yamabayashi ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density

Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

2007 ◽  
Vol 304 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Daisuke Nakamura ◽  
Satoshi Yamaguchi ◽  
Itaru Gunjishima ◽  
Yoshiharu Hirose ◽  
Tsunenobu Kimoto
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Dislocation Structure ◽  
Low Dislocation Density

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

2009 ◽  
Vol 311 (10) ◽  
pp. 3019-3024 ◽  
Author(s):  
Fumio Kawamura ◽  
Masaki Tanpo ◽  
Naoya Miyoshi ◽  
Mamoru Imade ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density ◽  
Dislocation Reduction

Preparation Method of High Purity Aluminum Single Crystals with Low Dislocation Density

1978 ◽  
Vol 17 (4) ◽  
pp. 611-616 ◽  
Author(s):  
Yasuhiko Deguchi ◽  
Nobuo Kamigaki ◽  
Kenji Kashiwaya ◽  
Takao Kino
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
High Purity ◽  
Preparation Method ◽  
Low Dislocation Density ◽  
High Purity Aluminum

Ultrahigh-purity aluminum single crystals with a low dislocation density grown by strain-annealing method

2002 ◽  
Vol 237-239 ◽  
pp. 367-372 ◽  
Author(s):  
K. Mizuno ◽  
S. Yamamoto ◽  
H. Okamoto ◽  
M. Kuga ◽  
E. Hashimoto
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density ◽  
Annealing Method

Sub-Grain Size and Hall-Petch Relation in Pure Copper Single Crystals

2007 ◽  
Vol 345-346 ◽  
pp. 29-32
Author(s):  
Sei Miura ◽  
Yoshito Nishimura ◽  
Nagato Ono
Keyword(s):  
Grain Size ◽  
Dislocation Density ◽  
Single Crystals ◽  
Pure Copper ◽  
Petch Relation ◽  
Low Dislocation Density ◽  
Initial Dislocation Density ◽  
Bridgeman Method ◽  
Copper Single Crystals ◽  
Critical Resolved Shear Stress

The effect of sub-grain on the yield stress of pure copper single crystals with the [253] orientation was investigated by using the etch pit technique. The single crystal plates were successfully prepared from the seed crystals, which were produced at the melting temperature of 1473 K by the Bridgeman method. The present investigation confirmed the Hall-Petch relation concerning the effect of sub-grain boundaries on the macroscopic yielding of pure copper. The result derived from the extrapolation of the relationship of critical resolved shear stress (CRSS) and the initial dislocation density and sub-grain size is in good agreement with the evaluation in high purity copper single crystals of low dislocation density.

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