This article presents the Low Noise Amplifier (LNA) design of CMOS Inductorless with noise cancellation (NC) technique for portable wireless receivers. An Inductorless CMOS LNA for multi-standard wireless applications with lessarea, single-chip is presented. This NC technique is used to cancel out the noise involvement in LNAs at the output of matching device. The proposed Inductorless CMOS LNA designed in a CMOS 45nm GPDK technology process. The simulated results within the frequency range of 1.04GHz-1.8GHz are considered here. The maximum gain has achieved 20dB @ 1.04GHz, 23dB @ 1.8GHz and a low NF of 1.2dB @ 1.04GHz, 0.6dB @ 1.8GHz. The input and output reflection coefficients are obtained as less than -10dB it is desirable value to fit in this LNA.
Low Noise Amplifier Design of CMOS Inductorless with Noise Cancellation Technique
