Semiconductor gas sensors

Author(s):  
Raivo Jaaniso ◽  
Ooi Kiang Tan
2015 ◽  
Vol 799-800 ◽  
pp. 994-997 ◽  
Author(s):  
Denis Veselov

The article presents the properties study results of the dielectric membranes for sensitive elements of semiconductor gas sensors, obtained by different modes of the reactive magnetron sputtering of silicon with application of the two-stage unilateral anisotropic etching of silicon in the organic alkaline solutions. The qualitative analysis of the membranes stability to destructions and deformations in the course of their fabrication and heating is given. Optimum structures and modes of films formation for dielectric membrane structures are determined. The admissible thickness of the thermal silicon oxide underlay, which is does not promote to considerable membranes deformations in the course of their fabrication and heating, is identified.


2010 ◽  
Vol 49 (42) ◽  
pp. 7632-7659 ◽  
Author(s):  
Antonio Tricoli ◽  
Marco Righettoni ◽  
Alexandra Teleki

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