Development of a Self-heated-stage for High Speed Process of Titanium by Reactive Ion Etching

2019 ◽  
Vol 139 (10) ◽  
pp. 341-345
Author(s):  
Yuya Kiryu ◽  
Gang Han ◽  
Junichi Imai ◽  
Masayuki Sohgawa ◽  
Takashi Abe
Keyword(s):  
High Speed ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heated Stage

scholarly journals Development of a self‐heated‐stage for high‐speed process of titanium by reactive ion etching

2020 ◽  
Vol 103 (1-4) ◽  
pp. 32-37
Author(s):  
Yuya Kiryu ◽  
Gang Han ◽  
Junichi Imai ◽  
Masayuki Sohgawa ◽  
Takashi Abe
Keyword(s):  
High Speed ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heated Stage

Development of Self-heated Stage Suitable for Thermal Assist Reactive Ion Etching of the Functional Metals

2017 ◽  
Vol 137 (9) ◽  
pp. 262-266 ◽  
Author(s):  
Yuki Murata ◽  
Gang Han ◽  
Daiki Ohkawa ◽  
Junichi Imai ◽  
Masayuki Sohgawa ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heated Stage

scholarly journals Development of Self‐Heated Stage Suitable for Thermal Assist Reactive Ion Etching of the Functional Metals

2018 ◽  
Vol 101 (3) ◽  
pp. 96-102 ◽  
Author(s):  
YUKI MURATA ◽  
GANG HAN ◽  
DAIKI OHKAWA ◽  
JUNICHI IMAI ◽  
MASAYUKI SOHGAWA ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heated Stage

Characterization and Modeling of Wafer and Die Level Uniformity in Deep Reactive Ion Etching (DRIE)

2003 ◽  
Vol 782 ◽  
Author(s):  
Hongwei Sun ◽  
Tyrone Hill ◽  
Martin Schmidt ◽  
Duane Boning
Keyword(s):  
High Speed ◽  
Reaction Rate ◽  
Reactive Ion Etching ◽  
Prediction Methods ◽  
Wafer Level ◽  
Ion Etching ◽  
Limited Region ◽  
Deep Reactive Ion Etching ◽  
Turbine Engine ◽  
Comparable Magnitude

ABSTRACTWafer and die level uniformity effects in Deep Reactive Ion Etching (DRIE) are quantitatively modeled and characterized. A two-level etching model has been developed to predict non-uniformities in high-speed rotating microstructures. The separation of wafer level and die level effects is achieved by sequentially etching wafers with uniformly distributed holes. The wafer level loadings range from 0.06% to 17.6%. Resulting wafer maps reflect the transition from an ion-limited region to a neutral-transport limited region. Additionally, long-range die-level interactions are also evaluated. Resulting die-level etching non-uniformities have a comparable magnitude to wafer-level effects. A model taking into account both the diffusion and reaction rate of neutrals is applied to predict the etching of up to 21 dies. Agreement between measurement and prediction support the hypothesis that the depletion of radicals is the main cause of die-level etch variation. The characterization and prediction methods are applied to etching a micro-scale turbine engine.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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