Microstructural development of SCS-6 SiC fibers during high temperature creep
1998 ◽
Vol 13
(7)
◽
pp. 1853-1860
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Keyword(s):
Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 °C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from βSiC to αSiC growing at the expense of the βSiC. The SiC1 through SiC3 regions of the fiber consist of a distinct (C + βSiC) two-phase region. The grain growth of the βSiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of βSiC.
1991 ◽
Vol 38
(5)
◽
pp. 681-684
Keyword(s):
2019 ◽
Vol 75
(7)
◽
pp. 636-641
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Keyword(s):
2009 ◽
Vol 510-511
◽
pp. 301-306
◽
Keyword(s):
2011 ◽
Vol 52
(3)
◽
pp. 336-339
◽
2014 ◽
Vol 2014
(0)
◽
pp. _OS0112-1_-_OS0112-3_
Keyword(s):
2004 ◽
Vol 2004
(0)
◽
pp. 451-452
Keyword(s):