Microstructural development of SCS-6 SiC fibers during high temperature creep

1998 ◽  
Vol 13 (7) ◽  
pp. 1853-1860 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Charles A. Lewinsohn ◽  
Charles E. Bakis ◽  
Richard E. Tressler

Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 °C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from βSiC to αSiC growing at the expense of the βSiC. The SiC1 through SiC3 regions of the fiber consist of a distinct (C + βSiC) two-phase region. The grain growth of the βSiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of βSiC.

2004 ◽  
Vol 2004 (0) ◽  
pp. 451-452
Author(s):  
Takayuki Bessho ◽  
Yasuo Ochi ◽  
Yutaka Matsumura ◽  
Toshio Ogasawara ◽  
Takuya Aoki

1988 ◽  
Vol 133 ◽  
Author(s):  
M. V. Nathal ◽  
J. O. Diaz ◽  
R. V. Miner

ABSTRACTThe creep behavior of single crystals of γ′ and γ alloys were investigated and compared to the response of two phase superalloys tested previously. High temperature deformation in the γ alloys was characteristic of a climb controlled mechanism, whereas the γ′ based materials exhibited glide controlled creep behavior. The superalloys were much more creep resistant than their constituent phases, which indicates the importance of the γ-γ′ interface as a barrier for dislocation motion during creep.


Sign in / Sign up

Export Citation Format

Share Document