scholarly journals Robocrystallographer: automated crystal structure text descriptions and analysis

2019 ◽  
Vol 9 (3) ◽  
pp. 874-881 ◽  
Author(s):  
Alex M. Ganose ◽  
Anubhav Jain

Abstract

2014 ◽  
Vol 30 (2) ◽  
pp. 286-294 ◽  
Author(s):  
Jianxin Zhu ◽  
Kevin Yoo ◽  
Akhila Denduluri ◽  
Wenting Hou ◽  
Juchen Guo ◽  
...  

Abstract


2015 ◽  
Vol 30 (17) ◽  
pp. 2611-2617 ◽  
Author(s):  
Yuzuru Miyazaki ◽  
Takaki Nakajo ◽  
Yuta Kikuchi ◽  
Kei Hayashi

Abstract


2016 ◽  
Vol 6 (2) ◽  
pp. 93-97
Author(s):  
María de los A. Cepeda-Pérez ◽  
Cristina M. Reyes-Marte ◽  
Valerie Ann Carrasquillo ◽  
William A. Muñiz ◽  
Edgar J. Trujillo ◽  
...  

Abstract


2013 ◽  
Vol 1538 ◽  
pp. 303-307
Author(s):  
Chiao-Yun Chang ◽  
Huei-Min Huang ◽  
Yu-Pin Lan ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
...  

AbstractThe crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.


2012 ◽  
Vol 27 (13) ◽  
pp. 1725-1731 ◽  
Author(s):  
Md Abdullah Al Mamun ◽  
Ashraf Hassan Farha ◽  
Yüksel Ufuktepe ◽  
Hani E. Elsayed-Ali ◽  
Abdelmageed A. Elmustafa

Abstract


2012 ◽  
Vol 27 (15) ◽  
pp. 2030-2034 ◽  
Author(s):  
Vladimir A. Cherepanov ◽  
Ludmila Ya. Gavrilova ◽  
Nadezhda E. Volkova ◽  
Tatyana V. Aksenova

Abstract


2019 ◽  
Vol 34 (17) ◽  
pp. 3000-3010 ◽  
Author(s):  
Zhaofeng Shi ◽  
Dayong Zhang ◽  
Jinnan Huo ◽  
Hongbo Wang ◽  
Junsheng Yu ◽  
...  

Abstract


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