Plasmon-polariton signature in the transmission and reflection spectra of one-dimensional metamaterial heterostructures

2013 ◽  
Vol 1617 ◽  
pp. 187-192
Author(s):  
E. Reyes-Gómez ◽  
S. B. Cavalcanti ◽  
L. E. Oliveira

ABSTRACTThe transmission and reflection properties of a meta-stack composed of a periodic AB arrangement of an air(A)/metamaterial(B) bilayer is presented, with the multi layered system embedded between two semi-infinite layers of the A material. For oblique incidence, a finite projection along the growth direction of the electric or magnetic field of the incident wave associated with the TM or TE modes, respectively, leads to a coupling of the photon modes with the bulk electric or magnetic metamaterial plasmons, in each layer of the meta-stack. This field-matter coupling gives rise to plasmon-polariton modes and signatures of electric or magnetic longitudinal bulk-plasmon polariton modes in the transmission, as well as in the reflection properties of the meta-stack, by means of a plasmon-polariton gap. Such features survive even in the case of a single bilayer and experimental observation should be, therefore, easily achieved.

2013 ◽  
Vol 39 (1) ◽  
pp. 178 ◽  
Author(s):  
S. B. Cavalcanti ◽  
P. A. Brandão ◽  
A. Bruno-Alfonso ◽  
L. E. Oliveira

2019 ◽  
Vol 6 (1) ◽  
pp. 23-29
Author(s):  
Haidar Howari

Studies of pulsed laser annealing (PLA) on semiconductor thin films were performed to examine changes of the optical and structural parameters due to the laser heat. Thin films of ZnS/ZnSe were deposited on quartz substrates at a pressure of 8.2*10-6 mbar using PVD technique. These thin films were annealed at different laser powers using CO2 pulsed laser. Transmission and reflection spectra were recorded before and after the annealing process. A decrease in the transmission and reflection spectra after annealing is observed. The absorption coefficient, refractive index, damping coefficient and dielectric constant were calculated before and after the annealing process. Changes in the optical parameters are found after the annealing process. The energy band gaps of ZnS and ZnSe have been determined. Upon annealing, an increase in the absorption coefficient is observed which is due to an improvement in the granular nanostructure of the ZnS/ZnSe thin films. XRD patterns of the prepared samples were obtained before and after the annealing procedure and revealed an enhancement in the crystallite structure upon annealing.


2020 ◽  
Vol 86 (6) ◽  
pp. 1039-1044
Author(s):  
Yu. A. Bumai ◽  
V. F. Valeev ◽  
V. I. Golovchuk ◽  
A. I. Gumarov ◽  
M. G. Lukashevich ◽  
...  

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