Ultra-Fast Melting and Solidification Behaviour of Amorphous and Crystalline Silicon

ABSTRACTSubnanosecond ultra-violet radiation pulses are used to produce relatively thick, large area amorphous layers onSi crystals by transient melting and solidification. The different behaviours of (001) and (111) Si orientations are highlighted. Observations of crystal growth phenomena during solidification at velocities lower than required for amorphization are correlated with theoretical predictions. Computer modelling of heat flow in amorphous silicon is refined.