Inhomogeneity in the Network Order of Device Quality a-Si:H
Keyword(s):
In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.
1997 ◽
Vol 124
(2)
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pp. 310-322
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Keyword(s):
2020 ◽
Vol 146
(4)
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pp. 04020007
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INFLUENCE OF THE COLLISION ENERGY ON STEREODYNAMICS OF THE F + LiH (v = 0, j = 0) → LiF + H REACTION
2011 ◽
Vol 10
(04)
◽
pp. 401-410
1974 ◽
Vol 16
(1)
◽
pp. 101-109
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2005 ◽
Vol 127
(6)
◽
pp. 1191-1193
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