AB Initio Study of the Ge Adsorption and Diffusion on Si (100) Surface
Keyword(s):
ABSTRACTWe identify the binding sites for adsorption of a single Ge atom on the Si (100) surface using ab initio total energy calculations. The calculated diffusion barriers are in excellent agreement with experimental estimates. Using a large supercell we resolve the controversy regarding the binding geometry and migration path for the adatom, and investigate the influence of the adatom on the buckling of Si dimers. The adatom induces a buckling defect that is frequently observed using scanning tunneling Microscopy (STM); therefore the study of single adatoms may be experimentally accessible.
2012 ◽
Vol 116
(26)
◽
pp. 13890-13895
◽
Keyword(s):
1998 ◽
Vol 264-268
◽
pp. 379-382
◽
Keyword(s):
1997 ◽
Vol 264
(3-4)
◽
pp. 371-375
◽
1990 ◽
Vol 94
(26)
◽
pp. 8926-8932
◽