Identification of Impurities and Defects in Semiconductors by Optical Spectroscopy
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AbstractA review is given of the information that can be obtained on defect centers in semiconductors by optical spectroscopy. Particular emphasis is given to donor and acceptor identification, and symmetry determination of transition metal and axial defect-complex centers. The information that can be obtained from isotope doping effects is discussed.
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1984 ◽
Vol 49
(3)
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pp. 673-679
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2012 ◽
Vol 39
(1)
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pp. 56-61
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2002 ◽
Vol 124
(28)
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pp. 8196-8197
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2016 ◽
Vol 96
(29)
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pp. 3075-3096
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